In this study, the effects of inserting mica into bulk silicon for thermoelectric use on the alloying, nanosize, and spacer effects that are mainly used to suppress thermal conductivity are examined. Results revealed that nanocrystallinity as well as the extremely high doping amount of antimony in the grains drastically enhance the power factor. Dislocations or vacancies can be induced at the nanoscopic level by performing multiple heat treatments and by inserting spacer materials at the bulk level, which in turn can inhibit the heat transport in high thermally conductive materials. Furthermore, a record and reliable figure-of-merit of ∼0.6 at 1173 K is obtained for mica-inserted SiSb 0.02 , in addition to reduced thermal conductivity (∼6.5 W/m-K). These observations open avenues for silicon and can further lead to the formation of intermetallic, half-Heusler, and other chalcogenide materials.
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (NRF-2015R1A5A1036133).
This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) ( NRF-2015R1A5A1036133 ).
© 2019 Elsevier Ltd
All Science Journal Classification (ASJC) codes
- Renewable Energy, Sustainability and the Environment
- Materials Science (miscellaneous)
- Nuclear Energy and Engineering
- Fuel Technology
- Energy Engineering and Power Technology