Spacer strategy for exceptionally low thermal conductivity and high zT in antimony-doped bulk silicon

Chhatrasal Gayner, Hoon Kim, Jiyong Kim, Woochul Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this study, the effects of inserting mica into bulk silicon for thermoelectric use on the alloying, nanosize, and spacer effects that are mainly used to suppress thermal conductivity are examined. Results revealed that nanocrystallinity as well as the extremely high doping amount of antimony in the grains drastically enhance the power factor. Dislocations or vacancies can be induced at the nanoscopic level by performing multiple heat treatments and by inserting spacer materials at the bulk level, which in turn can inhibit the heat transport in high thermally conductive materials. Furthermore, a record and reliable figure-of-merit of ∼0.6 at 1173 K is obtained for mica-inserted SiSb 0.02 , in addition to reduced thermal conductivity (∼6.5 W/m-K). These observations open avenues for silicon and can further lead to the formation of intermetallic, half-Heusler, and other chalcogenide materials.

Original languageEnglish
Pages (from-to)327-335
Number of pages9
JournalMaterials Today Energy
Volume12
DOIs
Publication statusPublished - 2019 Jun

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Materials Science (miscellaneous)
  • Nuclear Energy and Engineering
  • Fuel Technology
  • Energy Engineering and Power Technology

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