Abstract
The spatial variations of the structural, optical and electrical properties of Cu2ZnSnSe4 thin films grown by radio-frequency (RF) magnetron sputtering across a distance of 60 mm were investigated as a function of the discharge power. Noticeable changes in the deposition rate and elemental distribution were observed in the as-deposited films at the central and near-edge regions. After annealing in a Se atmosphere, the dependence of the phase evolution and electrical properties on the spatial position and power was also evident. Deposition at a low power of 30 W seems to be more promising in generating dominant Cu2ZnSnSe4 phase with well-packed crystallites on the surface. On the other hand, deposition at higher power tended to result in a significant portion of a secondary SnSe2 phase, which is responsible for the higher optical band gap and lower electrical resistivity, depending on the specific region of the film.
| Original language | English |
|---|---|
| Pages (from-to) | 175-180 |
| Number of pages | 6 |
| Journal | Materials Chemistry and Physics |
| Volume | 148 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
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Spatial and RF power dependence of the structural and electrical characteristics of copper zinc tin selenide thin films prepared by single elementary target sputtering. / Jo, Yeon Hwa; Jang, Jin Woo; Cho, Yong Soo.
In: Materials Chemistry and Physics, Vol. 148, No. 1-2, 01.01.2014, p. 175-180.Research output: Contribution to journal › Article
TY - JOUR
T1 - Spatial and RF power dependence of the structural and electrical characteristics of copper zinc tin selenide thin films prepared by single elementary target sputtering
AU - Jo, Yeon Hwa
AU - Jang, Jin Woo
AU - Cho, Yong Soo
PY - 2014/1/1
Y1 - 2014/1/1
N2 - The spatial variations of the structural, optical and electrical properties of Cu2ZnSnSe4 thin films grown by radio-frequency (RF) magnetron sputtering across a distance of 60 mm were investigated as a function of the discharge power. Noticeable changes in the deposition rate and elemental distribution were observed in the as-deposited films at the central and near-edge regions. After annealing in a Se atmosphere, the dependence of the phase evolution and electrical properties on the spatial position and power was also evident. Deposition at a low power of 30 W seems to be more promising in generating dominant Cu2ZnSnSe4 phase with well-packed crystallites on the surface. On the other hand, deposition at higher power tended to result in a significant portion of a secondary SnSe2 phase, which is responsible for the higher optical band gap and lower electrical resistivity, depending on the specific region of the film.
AB - The spatial variations of the structural, optical and electrical properties of Cu2ZnSnSe4 thin films grown by radio-frequency (RF) magnetron sputtering across a distance of 60 mm were investigated as a function of the discharge power. Noticeable changes in the deposition rate and elemental distribution were observed in the as-deposited films at the central and near-edge regions. After annealing in a Se atmosphere, the dependence of the phase evolution and electrical properties on the spatial position and power was also evident. Deposition at a low power of 30 W seems to be more promising in generating dominant Cu2ZnSnSe4 phase with well-packed crystallites on the surface. On the other hand, deposition at higher power tended to result in a significant portion of a secondary SnSe2 phase, which is responsible for the higher optical band gap and lower electrical resistivity, depending on the specific region of the film.
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U2 - 10.1016/j.matchemphys.2014.07.028
DO - 10.1016/j.matchemphys.2014.07.028
M3 - Article
VL - 148
SP - 175
EP - 180
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
SN - 0254-0584
IS - 1-2
ER -