Spatially resolvable optical emission spectrometer for analyzing density uniformity of semiconductor process plasma

Changhoon Oh, Hoonchul Ryoo, Hyungwoo Lee, Se Yeon Kim, Hun Jung Yi, Jae W. Hahn

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We proposed a spatially resolved optical emission spectrometer (SROES) for analyzing the uniformity of plasma density for semiconductor processes. To enhance the spatial resolution of the SROES, we constructed a SROES system using a series of lenses, apertures, and pinholes. We calculated the spatial resolution of the SROES for the variation of pinhole size, and our calculated results were in good agreement with the measured spatial variation of the constructed SROES. The performance of the SROES was also verified by detecting the correlation between the distribution of a fluorine radical in inductively coupled plasma etch process and the etch rate of a SiO2 film on a silicon wafer.

Original languageEnglish
Article number103109
JournalReview of Scientific Instruments
Volume81
Issue number10
DOIs
Publication statusPublished - 2010 Oct 1

Fingerprint

light emission
Spectrometers
spectrometers
Semiconductor materials
Plasmas
pinholes
spatial resolution
Plasma density
Inductively coupled plasma
Silicon wafers
Fluorine
plasma density
fluorine
Lenses
apertures
lenses
wafers
silicon

All Science Journal Classification (ASJC) codes

  • Instrumentation

Cite this

Oh, Changhoon ; Ryoo, Hoonchul ; Lee, Hyungwoo ; Kim, Se Yeon ; Yi, Hun Jung ; Hahn, Jae W. / Spatially resolvable optical emission spectrometer for analyzing density uniformity of semiconductor process plasma. In: Review of Scientific Instruments. 2010 ; Vol. 81, No. 10.
@article{ad0d09fbcdfc4c799b226ba4730d6df6,
title = "Spatially resolvable optical emission spectrometer for analyzing density uniformity of semiconductor process plasma",
abstract = "We proposed a spatially resolved optical emission spectrometer (SROES) for analyzing the uniformity of plasma density for semiconductor processes. To enhance the spatial resolution of the SROES, we constructed a SROES system using a series of lenses, apertures, and pinholes. We calculated the spatial resolution of the SROES for the variation of pinhole size, and our calculated results were in good agreement with the measured spatial variation of the constructed SROES. The performance of the SROES was also verified by detecting the correlation between the distribution of a fluorine radical in inductively coupled plasma etch process and the etch rate of a SiO2 film on a silicon wafer.",
author = "Changhoon Oh and Hoonchul Ryoo and Hyungwoo Lee and Kim, {Se Yeon} and Yi, {Hun Jung} and Hahn, {Jae W.}",
year = "2010",
month = "10",
day = "1",
doi = "10.1063/1.3488104",
language = "English",
volume = "81",
journal = "Review of Scientific Instruments",
issn = "0034-6748",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

Spatially resolvable optical emission spectrometer for analyzing density uniformity of semiconductor process plasma. / Oh, Changhoon; Ryoo, Hoonchul; Lee, Hyungwoo; Kim, Se Yeon; Yi, Hun Jung; Hahn, Jae W.

In: Review of Scientific Instruments, Vol. 81, No. 10, 103109, 01.10.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Spatially resolvable optical emission spectrometer for analyzing density uniformity of semiconductor process plasma

AU - Oh, Changhoon

AU - Ryoo, Hoonchul

AU - Lee, Hyungwoo

AU - Kim, Se Yeon

AU - Yi, Hun Jung

AU - Hahn, Jae W.

PY - 2010/10/1

Y1 - 2010/10/1

N2 - We proposed a spatially resolved optical emission spectrometer (SROES) for analyzing the uniformity of plasma density for semiconductor processes. To enhance the spatial resolution of the SROES, we constructed a SROES system using a series of lenses, apertures, and pinholes. We calculated the spatial resolution of the SROES for the variation of pinhole size, and our calculated results were in good agreement with the measured spatial variation of the constructed SROES. The performance of the SROES was also verified by detecting the correlation between the distribution of a fluorine radical in inductively coupled plasma etch process and the etch rate of a SiO2 film on a silicon wafer.

AB - We proposed a spatially resolved optical emission spectrometer (SROES) for analyzing the uniformity of plasma density for semiconductor processes. To enhance the spatial resolution of the SROES, we constructed a SROES system using a series of lenses, apertures, and pinholes. We calculated the spatial resolution of the SROES for the variation of pinhole size, and our calculated results were in good agreement with the measured spatial variation of the constructed SROES. The performance of the SROES was also verified by detecting the correlation between the distribution of a fluorine radical in inductively coupled plasma etch process and the etch rate of a SiO2 film on a silicon wafer.

UR - http://www.scopus.com/inward/record.url?scp=78149447893&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78149447893&partnerID=8YFLogxK

U2 - 10.1063/1.3488104

DO - 10.1063/1.3488104

M3 - Article

C2 - 21034077

AN - SCOPUS:78149447893

VL - 81

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

SN - 0034-6748

IS - 10

M1 - 103109

ER -