Spectral responsivity and quantum efficiency of n-Zno/p-Si photodiode fully isolated by ion-beam treatment

C. H. Park, I. S. Jeong, J. H. Kim, Seongil Im

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

Fabrication and spectral characteristics of n-ZnO/p-Si photodiodes that operated on the visible range and were fully isolated with the ion-beam induced technique were presented. It was shown that the isolated photodiodes demonstrated quantum efficiency of 70% maximum at 650 nm and 10% minimum at 420 nm. It was found that ion-beam-induced isolation was effective in reducing dark leakage currents, when the dose of Si+ ions reached 5×105 cm-2.

Original languageEnglish
Pages (from-to)3973-3975
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number22
DOIs
Publication statusPublished - 2003 Jun 2

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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