Spectroscopic ellipsometry modeling of ZnO thin films with various O 2 partial pressures

Edward Namkyu Cho, Suehye Park, Ilgu Yun

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

ZnO films were deposited on thermally oxidized SiO 2/p-type Si (100) substrates and glass substrates by DC magnetron sputtering using a metal Zn target. Three types of samples were prepared with various O 2/(Ar + O 2) ratios (O 2 partial pressure) of 20%, 50%, and 80%. The properties of these ZnO thin films were investigated using X-ray diffraction (XRD), optical transmittance, atomic force microscopy (AFM), and spectroscopic ellipsometry in the spectral region of 1.7-3.1 eV. The structural and optical properties of ZnO thin films were affected by O 2 partial pressure. Relationships between crystallinity, the ZnO surface roughness layer, and the refractive index (n) were investigated with varying O 2 partial pressure. It was shown that the spectroscopic ellipsometry extracted parameters well represented the ZnO thin film characteristics for different O 2 partial pressures.

Original languageEnglish
Pages (from-to)1606-1610
Number of pages5
JournalCurrent Applied Physics
Volume12
Issue number6
DOIs
Publication statusPublished - 2012 Nov 1

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this