Abstract
ZnO films were deposited on thermally oxidized SiO 2/p-type Si (100) substrates and glass substrates by DC magnetron sputtering using a metal Zn target. Three types of samples were prepared with various O 2/(Ar + O 2) ratios (O 2 partial pressure) of 20%, 50%, and 80%. The properties of these ZnO thin films were investigated using X-ray diffraction (XRD), optical transmittance, atomic force microscopy (AFM), and spectroscopic ellipsometry in the spectral region of 1.7-3.1 eV. The structural and optical properties of ZnO thin films were affected by O 2 partial pressure. Relationships between crystallinity, the ZnO surface roughness layer, and the refractive index (n) were investigated with varying O 2 partial pressure. It was shown that the spectroscopic ellipsometry extracted parameters well represented the ZnO thin film characteristics for different O 2 partial pressures.
| Original language | English |
|---|---|
| Pages (from-to) | 1606-1610 |
| Number of pages | 5 |
| Journal | Current Applied Physics |
| Volume | 12 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2012 Nov 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)
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Spectroscopic ellipsometry modeling of ZnO thin films with various O 2 partial pressures. / Cho, Edward Namkyu; Park, Suehye; Yun, Ilgu.
In: Current Applied Physics, Vol. 12, No. 6, 01.11.2012, p. 1606-1610.Research output: Contribution to journal › Article
TY - JOUR
T1 - Spectroscopic ellipsometry modeling of ZnO thin films with various O 2 partial pressures
AU - Cho, Edward Namkyu
AU - Park, Suehye
AU - Yun, Ilgu
PY - 2012/11/1
Y1 - 2012/11/1
N2 - ZnO films were deposited on thermally oxidized SiO 2/p-type Si (100) substrates and glass substrates by DC magnetron sputtering using a metal Zn target. Three types of samples were prepared with various O 2/(Ar + O 2) ratios (O 2 partial pressure) of 20%, 50%, and 80%. The properties of these ZnO thin films were investigated using X-ray diffraction (XRD), optical transmittance, atomic force microscopy (AFM), and spectroscopic ellipsometry in the spectral region of 1.7-3.1 eV. The structural and optical properties of ZnO thin films were affected by O 2 partial pressure. Relationships between crystallinity, the ZnO surface roughness layer, and the refractive index (n) were investigated with varying O 2 partial pressure. It was shown that the spectroscopic ellipsometry extracted parameters well represented the ZnO thin film characteristics for different O 2 partial pressures.
AB - ZnO films were deposited on thermally oxidized SiO 2/p-type Si (100) substrates and glass substrates by DC magnetron sputtering using a metal Zn target. Three types of samples were prepared with various O 2/(Ar + O 2) ratios (O 2 partial pressure) of 20%, 50%, and 80%. The properties of these ZnO thin films were investigated using X-ray diffraction (XRD), optical transmittance, atomic force microscopy (AFM), and spectroscopic ellipsometry in the spectral region of 1.7-3.1 eV. The structural and optical properties of ZnO thin films were affected by O 2 partial pressure. Relationships between crystallinity, the ZnO surface roughness layer, and the refractive index (n) were investigated with varying O 2 partial pressure. It was shown that the spectroscopic ellipsometry extracted parameters well represented the ZnO thin film characteristics for different O 2 partial pressures.
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U2 - 10.1016/j.cap.2012.05.030
DO - 10.1016/j.cap.2012.05.030
M3 - Article
VL - 12
SP - 1606
EP - 1610
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 6
ER -