Spectroscopic ellipsometry modeling of ZnO thin films with various O 2 partial pressures

Edward Namkyu Cho, Suehye Park, Ilgu Yun

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

ZnO films were deposited on thermally oxidized SiO 2/p-type Si (100) substrates and glass substrates by DC magnetron sputtering using a metal Zn target. Three types of samples were prepared with various O 2/(Ar + O 2) ratios (O 2 partial pressure) of 20%, 50%, and 80%. The properties of these ZnO thin films were investigated using X-ray diffraction (XRD), optical transmittance, atomic force microscopy (AFM), and spectroscopic ellipsometry in the spectral region of 1.7-3.1 eV. The structural and optical properties of ZnO thin films were affected by O 2 partial pressure. Relationships between crystallinity, the ZnO surface roughness layer, and the refractive index (n) were investigated with varying O 2 partial pressure. It was shown that the spectroscopic ellipsometry extracted parameters well represented the ZnO thin film characteristics for different O 2 partial pressures.

Original languageEnglish
Pages (from-to)1606-1610
Number of pages5
JournalCurrent Applied Physics
Volume12
Issue number6
DOIs
Publication statusPublished - 2012 Nov 1

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Spectroscopic ellipsometry
Partial pressure
ellipsometry
partial pressure
Thin films
thin films
Opacity
Substrates
Magnetron sputtering
Structural properties
Atomic force microscopy
crystallinity
Refractive index
transmittance
magnetron sputtering
surface roughness
Optical properties
Surface roughness
Metals
direct current

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Cho, Edward Namkyu ; Park, Suehye ; Yun, Ilgu. / Spectroscopic ellipsometry modeling of ZnO thin films with various O 2 partial pressures. In: Current Applied Physics. 2012 ; Vol. 12, No. 6. pp. 1606-1610.
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Spectroscopic ellipsometry modeling of ZnO thin films with various O 2 partial pressures. / Cho, Edward Namkyu; Park, Suehye; Yun, Ilgu.

In: Current Applied Physics, Vol. 12, No. 6, 01.11.2012, p. 1606-1610.

Research output: Contribution to journalArticle

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