La0.7Sr0.3MnO3 thin films were prepared on Pt/Ti/SiO2/Si substrates using a radio frequency magnetron sputtering technique under various Ar : O2 flow rates at a substrate temperature of 450 °C. X-ray diffraction results showed that the growth orientation and crystallinity of film were affected by Ar : O2 ratio. Using x-ray photoelectron spectroscopy and near edge x-ray absorption fine structure, the chemical state of La0.7Sr0.3MnO3 film was revealed to have reduced oxygen deficiencies with increasing O 2 flow during deposition. The valence band maximum was also shifted to the Fermi edge, and resistive switching properties were decreased with reduced oxygen vacancies from increased oxygen flow rate.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films