Abstract
We describe a method of fabricating ferroelectric beta-type poly(vinylidene fluoride) (PVDF) thin films on Au substrate by the humidity controlled spin casting combined with rapid thermal treatment. Our method produces thin uniform ferroelectric PVDF film with ordered beta crystals consisting of characteristic needlelike microdomains. A capacitor with a 160 nm thick ferroelectric PVDF film exhibits the remanent polarization and coercive voltage of ∼7.0 μC cm2 and 8 V, respectively, with the temperature stability of up to 160 °C. A ferroelectric field effect transistor also shows a drain current bistablility of 100 at zero gate voltage with ±20 V gate voltage sweep.
| Original language | English |
|---|---|
| Article number | 012921 |
| Journal | Applied Physics Letters |
| Volume | 92 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2008 Jan 16 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Spin cast ferroelectric beta poly(vinylidene fluoride) thin films via rapid thermal annealing. / Kang, Seok Ju; Park, Youn Jung; Sung, Jinwoo; Jo, Pil Sung; Park, Cheolmin; Kim, Kap Jin; Cho, Beong Ok.
In: Applied Physics Letters, Vol. 92, No. 1, 012921, 16.01.2008.Research output: Contribution to journal › Article
TY - JOUR
T1 - Spin cast ferroelectric beta poly(vinylidene fluoride) thin films via rapid thermal annealing
AU - Kang, Seok Ju
AU - Park, Youn Jung
AU - Sung, Jinwoo
AU - Jo, Pil Sung
AU - Park, Cheolmin
AU - Kim, Kap Jin
AU - Cho, Beong Ok
PY - 2008/1/16
Y1 - 2008/1/16
N2 - We describe a method of fabricating ferroelectric beta-type poly(vinylidene fluoride) (PVDF) thin films on Au substrate by the humidity controlled spin casting combined with rapid thermal treatment. Our method produces thin uniform ferroelectric PVDF film with ordered beta crystals consisting of characteristic needlelike microdomains. A capacitor with a 160 nm thick ferroelectric PVDF film exhibits the remanent polarization and coercive voltage of ∼7.0 μC cm2 and 8 V, respectively, with the temperature stability of up to 160 °C. A ferroelectric field effect transistor also shows a drain current bistablility of 100 at zero gate voltage with ±20 V gate voltage sweep.
AB - We describe a method of fabricating ferroelectric beta-type poly(vinylidene fluoride) (PVDF) thin films on Au substrate by the humidity controlled spin casting combined with rapid thermal treatment. Our method produces thin uniform ferroelectric PVDF film with ordered beta crystals consisting of characteristic needlelike microdomains. A capacitor with a 160 nm thick ferroelectric PVDF film exhibits the remanent polarization and coercive voltage of ∼7.0 μC cm2 and 8 V, respectively, with the temperature stability of up to 160 °C. A ferroelectric field effect transistor also shows a drain current bistablility of 100 at zero gate voltage with ±20 V gate voltage sweep.
UR - http://www.scopus.com/inward/record.url?scp=38049036230&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=38049036230&partnerID=8YFLogxK
U2 - 10.1063/1.2830701
DO - 10.1063/1.2830701
M3 - Article
AN - SCOPUS:38049036230
VL - 92
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 1
M1 - 012921
ER -