Spin cast ferroelectric beta poly(vinylidene fluoride) thin films via rapid thermal annealing

Seok Ju Kang; Youn Jung Park; Jinwoo Sung; Pil Sung Jo; Cheolmin Park; Kap Jin Kim; Beong Ok Cho

doi:10.1063/1.2830701

Spin cast ferroelectric beta poly(vinylidene fluoride) thin films via rapid thermal annealing

Seok Ju Kang, Youn Jung Park, Jinwoo Sung, Pil Sung Jo, Cheolmin Park, Kap Jin Kim, Beong Ok Cho

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

111 Citations (Scopus)

Abstract

We describe a method of fabricating ferroelectric beta-type poly(vinylidene fluoride) (PVDF) thin films on Au substrate by the humidity controlled spin casting combined with rapid thermal treatment. Our method produces thin uniform ferroelectric PVDF film with ordered beta crystals consisting of characteristic needlelike microdomains. A capacitor with a 160 nm thick ferroelectric PVDF film exhibits the remanent polarization and coercive voltage of ∼7.0 μC cm2 and 8 V, respectively, with the temperature stability of up to 160 °C. A ferroelectric field effect transistor also shows a drain current bistablility of 100 at zero gate voltage with ±20 V gate voltage sweep.

Original language	English
Article number	012921
Journal	Applied Physics Letters
Volume	92
Issue number	1
DOIs	https://doi.org/10.1063/1.2830701
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was supported by “SYSTEM2010” project and the 0.1 Terabit Non-volatile Memory Development funded by the Ministry of Commerce, Industry and Energy of the Korean Government, Seoul Research and Business Development Program (10701 and 10816), and the Second Stage of Brain Korea 21 Project in 2006 and by the Seoul Science Fellowship. The x-ray experiments at PAL (4C2 beamline), Korea were supported by MOST and POSCO, Korea.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2830701

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title = "Spin cast ferroelectric beta poly(vinylidene fluoride) thin films via rapid thermal annealing",

abstract = "We describe a method of fabricating ferroelectric beta-type poly(vinylidene fluoride) (PVDF) thin films on Au substrate by the humidity controlled spin casting combined with rapid thermal treatment. Our method produces thin uniform ferroelectric PVDF film with ordered beta crystals consisting of characteristic needlelike microdomains. A capacitor with a 160 nm thick ferroelectric PVDF film exhibits the remanent polarization and coercive voltage of ∼7.0 μC cm2 and 8 V, respectively, with the temperature stability of up to 160 °C. A ferroelectric field effect transistor also shows a drain current bistablility of 100 at zero gate voltage with ±20 V gate voltage sweep.",

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AU - Kang, Seok Ju

AU - Park, Youn Jung

AU - Sung, Jinwoo

AU - Jo, Pil Sung

AU - Park, Cheolmin

AU - Kim, Kap Jin

AU - Cho, Beong Ok

N1 - Funding Information: This work was supported by “SYSTEM2010” project and the 0.1 Terabit Non-volatile Memory Development funded by the Ministry of Commerce, Industry and Energy of the Korean Government, Seoul Research and Business Development Program (10701 and 10816), and the Second Stage of Brain Korea 21 Project in 2006 and by the Seoul Science Fellowship. The x-ray experiments at PAL (4C2 beamline), Korea were supported by MOST and POSCO, Korea.

PY - 2008

Y1 - 2008

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AB - We describe a method of fabricating ferroelectric beta-type poly(vinylidene fluoride) (PVDF) thin films on Au substrate by the humidity controlled spin casting combined with rapid thermal treatment. Our method produces thin uniform ferroelectric PVDF film with ordered beta crystals consisting of characteristic needlelike microdomains. A capacitor with a 160 nm thick ferroelectric PVDF film exhibits the remanent polarization and coercive voltage of ∼7.0 μC cm2 and 8 V, respectively, with the temperature stability of up to 160 °C. A ferroelectric field effect transistor also shows a drain current bistablility of 100 at zero gate voltage with ±20 V gate voltage sweep.

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