We describe a method of fabricating ferroelectric beta-type poly(vinylidene fluoride) (PVDF) thin films on Au substrate by the humidity controlled spin casting combined with rapid thermal treatment. Our method produces thin uniform ferroelectric PVDF film with ordered beta crystals consisting of characteristic needlelike microdomains. A capacitor with a 160 nm thick ferroelectric PVDF film exhibits the remanent polarization and coercive voltage of ∼7.0 μC cm2 and 8 V, respectively, with the temperature stability of up to 160 °C. A ferroelectric field effect transistor also shows a drain current bistablility of 100 at zero gate voltage with ±20 V gate voltage sweep.
Bibliographical noteFunding Information:
This work was supported by “SYSTEM2010” project and the 0.1 Terabit Non-volatile Memory Development funded by the Ministry of Commerce, Industry and Energy of the Korean Government, Seoul Research and Business Development Program (10701 and 10816), and the Second Stage of Brain Korea 21 Project in 2006 and by the Seoul Science Fellowship. The x-ray experiments at PAL (4C2 beamline), Korea were supported by MOST and POSCO, Korea.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)