Spin-dependent Coulomb blockade in a silicon-on-insulator-based single-electron transistor

S. D. Lee, K. S. Park, J. W. Park, Y. M. Moon, Jung B. Choi, Kyung-hwa Yoo, J. Kim

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We report low-temperature conductance measurement on a Coulomb-blockaded dot in a silicon-on-insulator-based single-electron transistor with in-plane side gates. The linear conductance for 4.2 K at zero magnetic field exhibits up to three paired peaks, indicating simple alternating odd (spin 1/2)-even(spin 0) filling. Three intrapair spacings are found to be nearly a constant value, corresponding to the single charging energy U, whereas two interpair spacings are different which are associated with (U+ΔE 1 and U+ΔE 2 , i.e., successive quantized level spacings added to U. The quantized level spacings were also revealed in the nonlinear current staircases.

Original languageEnglish
Pages (from-to)2355-2357
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number15
DOIs
Publication statusPublished - 2000 Oct 9

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single electron transistors
spacing
insulators
silicon
stairways
charging
magnetic fields
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, S. D., Park, K. S., Park, J. W., Moon, Y. M., Choi, J. B., Yoo, K., & Kim, J. (2000). Spin-dependent Coulomb blockade in a silicon-on-insulator-based single-electron transistor. Applied Physics Letters, 77(15), 2355-2357. https://doi.org/10.1063/1.1317540
Lee, S. D. ; Park, K. S. ; Park, J. W. ; Moon, Y. M. ; Choi, Jung B. ; Yoo, Kyung-hwa ; Kim, J. / Spin-dependent Coulomb blockade in a silicon-on-insulator-based single-electron transistor. In: Applied Physics Letters. 2000 ; Vol. 77, No. 15. pp. 2355-2357.
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Spin-dependent Coulomb blockade in a silicon-on-insulator-based single-electron transistor. / Lee, S. D.; Park, K. S.; Park, J. W.; Moon, Y. M.; Choi, Jung B.; Yoo, Kyung-hwa; Kim, J.

In: Applied Physics Letters, Vol. 77, No. 15, 09.10.2000, p. 2355-2357.

Research output: Contribution to journalArticle

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AB - We report low-temperature conductance measurement on a Coulomb-blockaded dot in a silicon-on-insulator-based single-electron transistor with in-plane side gates. The linear conductance for 4.2 K at zero magnetic field exhibits up to three paired peaks, indicating simple alternating odd (spin 1/2)-even(spin 0) filling. Three intrapair spacings are found to be nearly a constant value, corresponding to the single charging energy U, whereas two interpair spacings are different which are associated with (U+ΔE 1 and U+ΔE 2 , i.e., successive quantized level spacings added to U. The quantized level spacings were also revealed in the nonlinear current staircases.

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