Abstract
We report low-temperature conductance measurement on a Coulomb-blockaded dot in a silicon-on-insulator-based single-electron transistor with in-plane side gates. The linear conductance for 4.2 K at zero magnetic field exhibits up to three paired peaks, indicating simple alternating odd (spin 1/2)-even(spin 0) filling. Three intrapair spacings are found to be nearly a constant value, corresponding to the single charging energy U, whereas two interpair spacings are different which are associated with (U+ΔE 1 and U+ΔE 2 , i.e., successive quantized level spacings added to U. The quantized level spacings were also revealed in the nonlinear current staircases.
| Original language | English |
|---|---|
| Pages (from-to) | 2355-2357 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 77 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 2000 Oct 9 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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Spin-dependent Coulomb blockade in a silicon-on-insulator-based single-electron transistor. / Lee, S. D.; Park, K. S.; Park, J. W.; Moon, Y. M.; Choi, Jung B.; Yoo, Kyung-hwa; Kim, J.
In: Applied Physics Letters, Vol. 77, No. 15, 09.10.2000, p. 2355-2357.Research output: Contribution to journal › Article
TY - JOUR
T1 - Spin-dependent Coulomb blockade in a silicon-on-insulator-based single-electron transistor
AU - Lee, S. D.
AU - Park, K. S.
AU - Park, J. W.
AU - Moon, Y. M.
AU - Choi, Jung B.
AU - Yoo, Kyung-hwa
AU - Kim, J.
PY - 2000/10/9
Y1 - 2000/10/9
N2 - We report low-temperature conductance measurement on a Coulomb-blockaded dot in a silicon-on-insulator-based single-electron transistor with in-plane side gates. The linear conductance for 4.2 K at zero magnetic field exhibits up to three paired peaks, indicating simple alternating odd (spin 1/2)-even(spin 0) filling. Three intrapair spacings are found to be nearly a constant value, corresponding to the single charging energy U, whereas two interpair spacings are different which are associated with (U+ΔE 1 and U+ΔE 2 , i.e., successive quantized level spacings added to U. The quantized level spacings were also revealed in the nonlinear current staircases.
AB - We report low-temperature conductance measurement on a Coulomb-blockaded dot in a silicon-on-insulator-based single-electron transistor with in-plane side gates. The linear conductance for 4.2 K at zero magnetic field exhibits up to three paired peaks, indicating simple alternating odd (spin 1/2)-even(spin 0) filling. Three intrapair spacings are found to be nearly a constant value, corresponding to the single charging energy U, whereas two interpair spacings are different which are associated with (U+ΔE 1 and U+ΔE 2 , i.e., successive quantized level spacings added to U. The quantized level spacings were also revealed in the nonlinear current staircases.
UR - http://www.scopus.com/inward/record.url?scp=0007175888&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0007175888&partnerID=8YFLogxK
U2 - 10.1063/1.1317540
DO - 10.1063/1.1317540
M3 - Article
AN - SCOPUS:0007175888
VL - 77
SP - 2355
EP - 2357
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 15
ER -