Abstract
We report low-temperature conductance measurement on a Coulomb-blockaded dot in a silicon-on-insulator-based single-electron transistor with in-plane side gates. The linear conductance for 4.2 K at zero magnetic field exhibits up to three paired peaks, indicating simple alternating odd (spin 1/2)-even(spin 0) filling. Three intrapair spacings are found to be nearly a constant value, corresponding to the single charging energy U, whereas two interpair spacings are different which are associated with (U+ΔE1 and U+ΔE2, i.e., successive quantized level spacings added to U. The quantized level spacings were also revealed in the nonlinear current staircases.
| Original language | English |
|---|---|
| Pages (from-to) | 2355-2357 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 77 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 2000 Oct 9 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Lee, S. D., Park, K. S., Park, J. W., Moon, Y. M., Choi, J. B., Yoo, K. H., & Kim, J. (2000). Spin-dependent Coulomb blockade in a silicon-on-insulator-based single-electron transistor. Applied Physics Letters, 77(15), 2355-2357. https://doi.org/10.1063/1.1317540