Spin-dependent Coulomb blockade in a silicon-on-insulator-based single-electron transistor

S. D. Lee, K. S. Park, J. W. Park, Y. M. Moon, Jung B. Choi, K. H. Yoo, J. Kim

Research output: Contribution to journalArticle

14 Citations (Scopus)


We report low-temperature conductance measurement on a Coulomb-blockaded dot in a silicon-on-insulator-based single-electron transistor with in-plane side gates. The linear conductance for 4.2 K at zero magnetic field exhibits up to three paired peaks, indicating simple alternating odd (spin 1/2)-even(spin 0) filling. Three intrapair spacings are found to be nearly a constant value, corresponding to the single charging energy U, whereas two interpair spacings are different which are associated with (U+ΔE1 and U+ΔE2, i.e., successive quantized level spacings added to U. The quantized level spacings were also revealed in the nonlinear current staircases.

Original languageEnglish
Pages (from-to)2355-2357
Number of pages3
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 2000 Oct 9


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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