Spin-dependent Coulomb blockade in a silicon-on-insulator-based single-electron transistor

S. D. Lee; K. S. Park; J. W. Park; Y. M. Moon; Jung B. Choi; K. H. Yoo; J. Kim

doi:10.1063/1.1317540

Spin-dependent Coulomb blockade in a silicon-on-insulator-based single-electron transistor

S. D. Lee, K. S. Park, J. W. Park, Y. M. Moon, Jung B. Choi, K. H. Yoo, J. Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We report low-temperature conductance measurement on a Coulomb-blockaded dot in a silicon-on-insulator-based single-electron transistor with in-plane side gates. The linear conductance for 4.2 K at zero magnetic field exhibits up to three paired peaks, indicating simple alternating odd (spin 1/2)-even(spin 0) filling. Three intrapair spacings are found to be nearly a constant value, corresponding to the single charging energy U, whereas two interpair spacings are different which are associated with (U+ΔE₁ and U+ΔE₂, i.e., successive quantized level spacings added to U. The quantized level spacings were also revealed in the nonlinear current staircases.

Original language	English
Pages (from-to)	2355-2357
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	15
DOIs	https://doi.org/10.1063/1.1317540
Publication status	Published - 2000 Oct 9

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1317540

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abstract = "We report low-temperature conductance measurement on a Coulomb-blockaded dot in a silicon-on-insulator-based single-electron transistor with in-plane side gates. The linear conductance for 4.2 K at zero magnetic field exhibits up to three paired peaks, indicating simple alternating odd (spin 1/2)-even(spin 0) filling. Three intrapair spacings are found to be nearly a constant value, corresponding to the single charging energy U, whereas two interpair spacings are different which are associated with (U+ΔE1 and U+ΔE2, i.e., successive quantized level spacings added to U. The quantized level spacings were also revealed in the nonlinear current staircases.",

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AU - Lee, S. D.

AU - Park, K. S.

AU - Park, J. W.

AU - Moon, Y. M.

AU - Choi, Jung B.

AU - Yoo, K. H.

AU - Kim, J.

PY - 2000/10/9

Y1 - 2000/10/9

N2 - We report low-temperature conductance measurement on a Coulomb-blockaded dot in a silicon-on-insulator-based single-electron transistor with in-plane side gates. The linear conductance for 4.2 K at zero magnetic field exhibits up to three paired peaks, indicating simple alternating odd (spin 1/2)-even(spin 0) filling. Three intrapair spacings are found to be nearly a constant value, corresponding to the single charging energy U, whereas two interpair spacings are different which are associated with (U+ΔE1 and U+ΔE2, i.e., successive quantized level spacings added to U. The quantized level spacings were also revealed in the nonlinear current staircases.

AB - We report low-temperature conductance measurement on a Coulomb-blockaded dot in a silicon-on-insulator-based single-electron transistor with in-plane side gates. The linear conductance for 4.2 K at zero magnetic field exhibits up to three paired peaks, indicating simple alternating odd (spin 1/2)-even(spin 0) filling. Three intrapair spacings are found to be nearly a constant value, corresponding to the single charging energy U, whereas two interpair spacings are different which are associated with (U+ΔE1 and U+ΔE2, i.e., successive quantized level spacings added to U. The quantized level spacings were also revealed in the nonlinear current staircases.

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