Abstract
We report low-temperature conductance measurement on a Coulomb-blockaded dot in a silicon-on-insulator-based single-electron transistor with in-plane side gates. The linear conductance for 4.2 K at zero magnetic field exhibits up to three paired peaks, indicating simple alternating odd (spin 1/2)-even(spin 0) filling. Three intrapair spacings are found to be nearly a constant value, corresponding to the single charging energy U, whereas two interpair spacings are different which are associated with (U+ΔE1 and U+ΔE2, i.e., successive quantized level spacings added to U. The quantized level spacings were also revealed in the nonlinear current staircases.
Original language | English |
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Pages (from-to) | 2355-2357 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 77 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2000 Oct 9 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)