Spin injection in an FeCo/Si/FeCo structure

A spin transistor

H. J. Lee, U. J. Hwang, S. J. Cho, Y. M. Kim, J. Y. Chang, Y. J. Park, S. H. Han, Y. K. Kim, Moo Whan Shin, Wooyoung Lee

Research output: Contribution to journalConference article

Abstract

The spin-valve effect in a lateral spin-injection device with a ferromagnetic metal (FM)/Si/FM structure was reported. A 200 Å thick SiO2 top layer was grown on the Si wafer by thermal oxidation to make only the contacts FM1 and FM2 in contact with the Si. The spin-valve effect demonstrated that the spin-polarized electrons were injected from the first contact and, after propagating through the Si, were collected by the second contact.

Original languageEnglish
JournalDigests of the Intermag Conference
Publication statusPublished - 2003 Oct 1
EventIntermag 2003: International Magnetics Conference - Boston, MA, United States
Duration: 2003 Mar 282003 Apr 3

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Ferromagnetic materials
Transistors
Electron tubes
Oxidation
Electrons
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Lee, H. J., Hwang, U. J., Cho, S. J., Kim, Y. M., Chang, J. Y., Park, Y. J., ... Lee, W. (2003). Spin injection in an FeCo/Si/FeCo structure: A spin transistor. Digests of the Intermag Conference.
Lee, H. J. ; Hwang, U. J. ; Cho, S. J. ; Kim, Y. M. ; Chang, J. Y. ; Park, Y. J. ; Han, S. H. ; Kim, Y. K. ; Shin, Moo Whan ; Lee, Wooyoung. / Spin injection in an FeCo/Si/FeCo structure : A spin transistor. In: Digests of the Intermag Conference. 2003.
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title = "Spin injection in an FeCo/Si/FeCo structure: A spin transistor",
abstract = "The spin-valve effect in a lateral spin-injection device with a ferromagnetic metal (FM)/Si/FM structure was reported. A 200 {\AA} thick SiO2 top layer was grown on the Si wafer by thermal oxidation to make only the contacts FM1 and FM2 in contact with the Si. The spin-valve effect demonstrated that the spin-polarized electrons were injected from the first contact and, after propagating through the Si, were collected by the second contact.",
author = "Lee, {H. J.} and Hwang, {U. J.} and Cho, {S. J.} and Kim, {Y. M.} and Chang, {J. Y.} and Park, {Y. J.} and Han, {S. H.} and Kim, {Y. K.} and Shin, {Moo Whan} and Wooyoung Lee",
year = "2003",
month = "10",
day = "1",
language = "English",
journal = "Digests of the Intermag Conference",
issn = "0074-6843",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Lee, HJ, Hwang, UJ, Cho, SJ, Kim, YM, Chang, JY, Park, YJ, Han, SH, Kim, YK, Shin, MW & Lee, W 2003, 'Spin injection in an FeCo/Si/FeCo structure: A spin transistor', Digests of the Intermag Conference.

Spin injection in an FeCo/Si/FeCo structure : A spin transistor. / Lee, H. J.; Hwang, U. J.; Cho, S. J.; Kim, Y. M.; Chang, J. Y.; Park, Y. J.; Han, S. H.; Kim, Y. K.; Shin, Moo Whan; Lee, Wooyoung.

In: Digests of the Intermag Conference, 01.10.2003.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Spin injection in an FeCo/Si/FeCo structure

T2 - A spin transistor

AU - Lee, H. J.

AU - Hwang, U. J.

AU - Cho, S. J.

AU - Kim, Y. M.

AU - Chang, J. Y.

AU - Park, Y. J.

AU - Han, S. H.

AU - Kim, Y. K.

AU - Shin, Moo Whan

AU - Lee, Wooyoung

PY - 2003/10/1

Y1 - 2003/10/1

N2 - The spin-valve effect in a lateral spin-injection device with a ferromagnetic metal (FM)/Si/FM structure was reported. A 200 Å thick SiO2 top layer was grown on the Si wafer by thermal oxidation to make only the contacts FM1 and FM2 in contact with the Si. The spin-valve effect demonstrated that the spin-polarized electrons were injected from the first contact and, after propagating through the Si, were collected by the second contact.

AB - The spin-valve effect in a lateral spin-injection device with a ferromagnetic metal (FM)/Si/FM structure was reported. A 200 Å thick SiO2 top layer was grown on the Si wafer by thermal oxidation to make only the contacts FM1 and FM2 in contact with the Si. The spin-valve effect demonstrated that the spin-polarized electrons were injected from the first contact and, after propagating through the Si, were collected by the second contact.

UR - http://www.scopus.com/inward/record.url?scp=0141679674&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141679674&partnerID=8YFLogxK

M3 - Conference article

JO - Digests of the Intermag Conference

JF - Digests of the Intermag Conference

SN - 0074-6843

ER -

Lee HJ, Hwang UJ, Cho SJ, Kim YM, Chang JY, Park YJ et al. Spin injection in an FeCo/Si/FeCo structure: A spin transistor. Digests of the Intermag Conference. 2003 Oct 1.