Spin polarization decay in magnetic tunnel junctions with semimetal-inserted layers

Kyoung Il Lee, Jong Wook Roh, Kiyoung Lee, Joonyeon Chang, Kyung Ho Shin, Mark Johnson, Wooyoung Lee

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Abstract

Magnetic tunnel junctions (MTJs) were fabricated with a thin layer of semimetallic bismuth inserted between the tunnel barrier and the top ferromagnetic electrode. The tunneling magnetoresistance (TMR) was measured on a set of samples for which the thickness of the inserted layer varied from 0 to 20 nm. The TMR decreased with an exponential decay length that was found to be Bi =4.1 nm=0.48 λF,Bi, where λF,Bi is the Fermi wavelength measured in comparable Bi films. This result is in remarkably good agreement with the decay length previously measured in MTJs with inserted copper layers, λCu =0.58 λF,Cu, even though the values of λF differ by an order of magnitude. It thereby gives a confirmation that the characteristic length scale of the tunneling density of states is the Fermi wavelength. Measurements of TMR as a function of bias voltage show a large asymmetry and the peak TMR is shifted to a nonzero value.

Original languageEnglish
Article number093913
JournalJournal of Applied Physics
Volume107
Issue number9
DOIs
Publication statusPublished - 2010 May 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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