Spin transport in a lateral spin-injection device with an FM/Si/FM junction

W. J. Hwang, H. J. Lee, K. I. Lee, Y. M. Kim, J. Y. Chang, S. H. Han, Moo Whan Shin, Y. K. Kim, Wooyoung Lee

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The spin injection and detection have been investigated in a lateral spin-injection device with an FeCo/Si/FeCo junction structure. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4-300 K, revealing that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact. The inverse MR was found to be independent of temperature. Our results demonstrate spin-polarized current injection and detection in the FM/Si/FM structure at room temperature.

Original languageEnglish
Pages (from-to)1915-1916
Number of pages2
JournalJournal of Magnetism and Magnetic Materials
Volume272-276
Issue numberIII
DOIs
Publication statusPublished - 2004 Jan 1

Fingerprint

Magnetoresistance
frequency modulation
injection
Magnetic fields
Temperature
Electrons
room temperature
magnetic fields
electrons
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Hwang, W. J. ; Lee, H. J. ; Lee, K. I. ; Kim, Y. M. ; Chang, J. Y. ; Han, S. H. ; Shin, Moo Whan ; Kim, Y. K. ; Lee, Wooyoung. / Spin transport in a lateral spin-injection device with an FM/Si/FM junction. In: Journal of Magnetism and Magnetic Materials. 2004 ; Vol. 272-276, No. III. pp. 1915-1916.
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abstract = "The spin injection and detection have been investigated in a lateral spin-injection device with an FeCo/Si/FeCo junction structure. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4-300 K, revealing that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact. The inverse MR was found to be independent of temperature. Our results demonstrate spin-polarized current injection and detection in the FM/Si/FM structure at room temperature.",
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Spin transport in a lateral spin-injection device with an FM/Si/FM junction. / Hwang, W. J.; Lee, H. J.; Lee, K. I.; Kim, Y. M.; Chang, J. Y.; Han, S. H.; Shin, Moo Whan; Kim, Y. K.; Lee, Wooyoung.

In: Journal of Magnetism and Magnetic Materials, Vol. 272-276, No. III, 01.01.2004, p. 1915-1916.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Spin transport in a lateral spin-injection device with an FM/Si/FM junction

AU - Hwang, W. J.

AU - Lee, H. J.

AU - Lee, K. I.

AU - Kim, Y. M.

AU - Chang, J. Y.

AU - Han, S. H.

AU - Shin, Moo Whan

AU - Kim, Y. K.

AU - Lee, Wooyoung

PY - 2004/1/1

Y1 - 2004/1/1

N2 - The spin injection and detection have been investigated in a lateral spin-injection device with an FeCo/Si/FeCo junction structure. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4-300 K, revealing that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact. The inverse MR was found to be independent of temperature. Our results demonstrate spin-polarized current injection and detection in the FM/Si/FM structure at room temperature.

AB - The spin injection and detection have been investigated in a lateral spin-injection device with an FeCo/Si/FeCo junction structure. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4-300 K, revealing that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact. The inverse MR was found to be independent of temperature. Our results demonstrate spin-polarized current injection and detection in the FM/Si/FM structure at room temperature.

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