Spin-valve effect in an FM/Si/FM junction

K. I. Lee, H. J. Lee, J. Y. Chang, S. H. Han, Y. K. Kim, Woo Young Lee

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The spin transport in a lateral spin-injection device with an FeCo/Si/ FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4-300 K. This is attributable to the switching of the magnetisation of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetisation in one contact is aligned antiparallel to that in the other. The spin-valve effect was found to be independent of temperature. Data from the device suggest that the spin-polarised electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

Original languageEnglish
Pages (from-to)131-133
Number of pages3
JournalJournal of Materials Science: Materials in Electronics
Volume16
Issue number3
DOIs
Publication statusPublished - 2005 Mar

Bibliographical note

Funding Information:
This work was supported by KIST Vision 21 Program.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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