Spin-valve effect in an FM/Si/FM junction

K. I. Lee, H. J. Lee, J. Y. Chang, S. H. Han, Y. K. Kim, Woo Young Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The spin transport in a lateral spin-injection device with an FeCo/Si/ FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4-300 K. This is attributable to the switching of the magnetisation of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetisation in one contact is aligned antiparallel to that in the other. The spin-valve effect was found to be independent of temperature. Data from the device suggest that the spin-polarised electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

Original languageEnglish
Pages (from-to)131-133
Number of pages3
JournalJournal of Materials Science: Materials in Electronics
Volume16
Issue number3
DOIs
Publication statusPublished - 2005 Mar 1

Fingerprint

frequency modulation
Magnetization
Magnetic fields
Magnetoresistance
magnetization
Electrons
magnetic fields
injection
Temperature
electrons
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Lee, K. I. ; Lee, H. J. ; Chang, J. Y. ; Han, S. H. ; Kim, Y. K. ; Lee, Woo Young. / Spin-valve effect in an FM/Si/FM junction. In: Journal of Materials Science: Materials in Electronics. 2005 ; Vol. 16, No. 3. pp. 131-133.
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Spin-valve effect in an FM/Si/FM junction. / Lee, K. I.; Lee, H. J.; Chang, J. Y.; Han, S. H.; Kim, Y. K.; Lee, Woo Young.

In: Journal of Materials Science: Materials in Electronics, Vol. 16, No. 3, 01.03.2005, p. 131-133.

Research output: Contribution to journalArticle

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AU - Lee, K. I.

AU - Lee, H. J.

AU - Chang, J. Y.

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AU - Lee, Woo Young

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AB - The spin transport in a lateral spin-injection device with an FeCo/Si/ FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4-300 K. This is attributable to the switching of the magnetisation of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetisation in one contact is aligned antiparallel to that in the other. The spin-valve effect was found to be independent of temperature. Data from the device suggest that the spin-polarised electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

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