Sputter-deposited Ga-Sn-Zn-O thin films for transparent thin film transistors

Dong Ho Kim, Hey Ri Kim, Jung Dae Kwon, Gun Hwan Lee, Hee Sung Lee, Seongil Im

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Ga-Sn-Zn-O (GTZO) thin films were prepared on glass substrates at 100 °C by co-sputtering of Ga-doped ZnO and SnO 2 targets. Characteristic properties of the films were investigated with varying oxygen gas content in the sputtering ambient. Whereas amorphous GTZO films were prepared with pure Ar sputtering, polycrystalline films were obtained with the addition of oxygen gas. With a proper mixing ratio of sputtering gases, O 2/(Ar + O 2) ∼2%, we could obtain GTZO films with good performances as an active channel material in thin film transistor (TFT); i.e, field effect mobility of 12.2 cm 2 V -1 s -1, on/off current ratio of 10 9, and subthreshold voltage swing of 0.46 V decade -1.

Original languageEnglish
Pages (from-to)2934-2938
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume208
Issue number12
DOIs
Publication statusPublished - 2011 Dec 1

Fingerprint

Thin film transistors
Sputtering
transistors
sputtering
Thin films
Gases
thin films
gases
Oxygen
oxygen
Amorphous films
mixing ratios
Glass
glass
Electric potential
electric potential
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kim, Dong Ho ; Kim, Hey Ri ; Kwon, Jung Dae ; Lee, Gun Hwan ; Lee, Hee Sung ; Im, Seongil. / Sputter-deposited Ga-Sn-Zn-O thin films for transparent thin film transistors. In: Physica Status Solidi (A) Applications and Materials Science. 2011 ; Vol. 208, No. 12. pp. 2934-2938.
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Sputter-deposited Ga-Sn-Zn-O thin films for transparent thin film transistors. / Kim, Dong Ho; Kim, Hey Ri; Kwon, Jung Dae; Lee, Gun Hwan; Lee, Hee Sung; Im, Seongil.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 208, No. 12, 01.12.2011, p. 2934-2938.

Research output: Contribution to journalArticle

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AU - Kim, Hey Ri

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AB - Ga-Sn-Zn-O (GTZO) thin films were prepared on glass substrates at 100 °C by co-sputtering of Ga-doped ZnO and SnO 2 targets. Characteristic properties of the films were investigated with varying oxygen gas content in the sputtering ambient. Whereas amorphous GTZO films were prepared with pure Ar sputtering, polycrystalline films were obtained with the addition of oxygen gas. With a proper mixing ratio of sputtering gases, O 2/(Ar + O 2) ∼2%, we could obtain GTZO films with good performances as an active channel material in thin film transistor (TFT); i.e, field effect mobility of 12.2 cm 2 V -1 s -1, on/off current ratio of 10 9, and subthreshold voltage swing of 0.46 V decade -1.

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