Sputter-deposited low loss Mg2SiO4 thin films for multilayer hybrids

Chan Su Han, Bhaskar Chandra Mohanty, Chong Yun Kang, Yong Soo Cho

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Mg2SiO4 (forsterite) thin films grown by rf magnetron sputtering from a ceramic target have been investigated particularly for thin film hybrids requiring a low loss dielectric layer. Understanding of the processing parameters and their correlations to dielectric properties is the main concern of this work. Fundamental parameters, such as working pressure and post-deposition annealing temperature, were found to influence phase evolution, morphology and dielectric properties. For example, polycrystalline α-Mg2SiO4 could be obtained above the annealing temperature of 500 C regardless of working pressure. The dielectric constant increased gradually while the dielectric loss showed a reverse trend of decrease with raising annealing temperature to 700 C. Dielectric constant of ~ 6.8 and dielectric loss of ~ 2.8 × 10- 3 were obtained at 1 MHz from the sample annealed at 700 C. A promising planarized thin film structure for fine line multilevel packaging was demonstrated without any significant inter-diffusion and damages between Mg2SiO4 and Pt layers.

Original languageEnglish
Pages (from-to)250-254
Number of pages5
JournalThin Solid Films
Volume527
DOIs
Publication statusPublished - 2013 Jan 1

Bibliographical note

Funding Information:
This work was supported by a grant from the Ministry of Knowledge Economy, Korea , specified by the Foundation R&D Program for Core Technology of Materials , and also partially by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science and Technology (No. 2011-0017983 and 2011-0020285 ).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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