Sputter-deposited low loss Mg2SiO4 thin films for multilayer hybrids

Chan Su Han, Bhaskar Chandra Mohanty, Chong Yun Kang, Yong Soo Cho

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Mg2SiO4 (forsterite) thin films grown by rf magnetron sputtering from a ceramic target have been investigated particularly for thin film hybrids requiring a low loss dielectric layer. Understanding of the processing parameters and their correlations to dielectric properties is the main concern of this work. Fundamental parameters, such as working pressure and post-deposition annealing temperature, were found to influence phase evolution, morphology and dielectric properties. For example, polycrystalline α-Mg2SiO4 could be obtained above the annealing temperature of 500 C regardless of working pressure. The dielectric constant increased gradually while the dielectric loss showed a reverse trend of decrease with raising annealing temperature to 700 C. Dielectric constant of ~ 6.8 and dielectric loss of ~ 2.8 × 10- 3 were obtained at 1 MHz from the sample annealed at 700 C. A promising planarized thin film structure for fine line multilevel packaging was demonstrated without any significant inter-diffusion and damages between Mg2SiO4 and Pt layers.

Original languageEnglish
Pages (from-to)250-254
Number of pages5
JournalThin Solid Films
Volume527
DOIs
Publication statusPublished - 2013 Jan 1

Fingerprint

Dielectric losses
dielectric loss
Multilayers
Annealing
Thin films
Dielectric properties
annealing
dielectric properties
Permittivity
thin films
permittivity
forsterite
packaging
Magnetron sputtering
Temperature
temperature
Packaging
magnetron sputtering
ceramics
damage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Han, Chan Su ; Mohanty, Bhaskar Chandra ; Kang, Chong Yun ; Cho, Yong Soo. / Sputter-deposited low loss Mg2SiO4 thin films for multilayer hybrids. In: Thin Solid Films. 2013 ; Vol. 527. pp. 250-254.
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Sputter-deposited low loss Mg2SiO4 thin films for multilayer hybrids. / Han, Chan Su; Mohanty, Bhaskar Chandra; Kang, Chong Yun; Cho, Yong Soo.

In: Thin Solid Films, Vol. 527, 01.01.2013, p. 250-254.

Research output: Contribution to journalArticle

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T1 - Sputter-deposited low loss Mg2SiO4 thin films for multilayer hybrids

AU - Han, Chan Su

AU - Mohanty, Bhaskar Chandra

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AU - Cho, Yong Soo

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AB - Mg2SiO4 (forsterite) thin films grown by rf magnetron sputtering from a ceramic target have been investigated particularly for thin film hybrids requiring a low loss dielectric layer. Understanding of the processing parameters and their correlations to dielectric properties is the main concern of this work. Fundamental parameters, such as working pressure and post-deposition annealing temperature, were found to influence phase evolution, morphology and dielectric properties. For example, polycrystalline α-Mg2SiO4 could be obtained above the annealing temperature of 500 C regardless of working pressure. The dielectric constant increased gradually while the dielectric loss showed a reverse trend of decrease with raising annealing temperature to 700 C. Dielectric constant of ~ 6.8 and dielectric loss of ~ 2.8 × 10- 3 were obtained at 1 MHz from the sample annealed at 700 C. A promising planarized thin film structure for fine line multilevel packaging was demonstrated without any significant inter-diffusion and damages between Mg2SiO4 and Pt layers.

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