We have fabricated thin-film transistors (TFTs) using an amorphous carbon-indium-zinc oxide (a-CIZO) as an active-channel layer deposited via radio-frequency sputtering on atomic layer deposition grown Al2O3 substrates at room temperature. The deposited a-CIZO TFT postannealed at 250°C exhibited a saturation field effect mobility of 32.3 cm2/V·s, a subthreshold swing of 0.55 V/decade, a threshold voltage of 11.2 V, and an ON/OFF current ratio of 6.2 × 107. Moreover, the a-CIZO TFTs showed with a good bias stability.
Bibliographical notePublisher Copyright:
© 1980-2012 IEEE.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering