Sputtered deposited carbon-indium-zinc oxide channel layers for use in thin-film transistors

Shanmugam Parthiban; Soo Hyun Kim; Jang Yeon Kwon

doi:10.1109/LED.2014.2345740

Sputtered deposited carbon-indium-zinc oxide channel layers for use in thin-film transistors

Shanmugam Parthiban, Soo Hyun Kim, Jang Yeon Kwon

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We have fabricated thin-film transistors (TFTs) using an amorphous carbon-indium-zinc oxide (a-CIZO) as an active-channel layer deposited via radio-frequency sputtering on atomic layer deposition grown Al₂O₃ substrates at room temperature. The deposited a-CIZO TFT postannealed at 250°C exhibited a saturation field effect mobility of 32.3 cm²/V·s, a subthreshold swing of 0.55 V/decade, a threshold voltage of 11.2 V, and an ON/OFF current ratio of 6.2 × 10⁷. Moreover, the a-CIZO TFTs showed with a good bias stability.

Original language	English
Article number	6902754
Pages (from-to)	1028-1030
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	10
DOIs	https://doi.org/10.1109/LED.2014.2345740
Publication status	Published - 2014 Oct 1

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2014.2345740

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abstract = "We have fabricated thin-film transistors (TFTs) using an amorphous carbon-indium-zinc oxide (a-CIZO) as an active-channel layer deposited via radio-frequency sputtering on atomic layer deposition grown Al2O3 substrates at room temperature. The deposited a-CIZO TFT postannealed at 250°C exhibited a saturation field effect mobility of 32.3 cm2/V·s, a subthreshold swing of 0.55 V/decade, a threshold voltage of 11.2 V, and an ON/OFF current ratio of 6.2 × 107. Moreover, the a-CIZO TFTs showed with a good bias stability.",

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AB - We have fabricated thin-film transistors (TFTs) using an amorphous carbon-indium-zinc oxide (a-CIZO) as an active-channel layer deposited via radio-frequency sputtering on atomic layer deposition grown Al2O3 substrates at room temperature. The deposited a-CIZO TFT postannealed at 250°C exhibited a saturation field effect mobility of 32.3 cm2/V·s, a subthreshold swing of 0.55 V/decade, a threshold voltage of 11.2 V, and an ON/OFF current ratio of 6.2 × 107. Moreover, the a-CIZO TFTs showed with a good bias stability.

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Sputtered deposited carbon-indium-zinc oxide channel layers for use in thin-film transistors

Abstract

Bibliographical note

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