Sputtered deposited carbon-indium-zinc oxide channel layers for use in thin-film transistors

Shanmugam Parthiban, Soo Hyun Kim, Jang Yeon Kwon

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have fabricated thin-film transistors (TFTs) using an amorphous carbon-indium-zinc oxide (a-CIZO) as an active-channel layer deposited via radio-frequency sputtering on atomic layer deposition grown Al2O3 substrates at room temperature. The deposited a-CIZO TFT postannealed at 250°C exhibited a saturation field effect mobility of 32.3 cm2/V·s, a subthreshold swing of 0.55 V/decade, a threshold voltage of 11.2 V, and an ON/OFF current ratio of 6.2 × 107. Moreover, the a-CIZO TFTs showed with a good bias stability.

Original languageEnglish
Article number6902754
Pages (from-to)1028-1030
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number10
DOIs
Publication statusPublished - 2014 Oct 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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