TY - JOUR
T1 - Sputtered deposited carbon-indium-zinc oxide channel layers for use in thin-film transistors
AU - Parthiban, Shanmugam
AU - Kim, Soo Hyun
AU - Kwon, Jang Yeon
N1 - Publisher Copyright:
© 1980-2012 IEEE.
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2014/10/1
Y1 - 2014/10/1
N2 - We have fabricated thin-film transistors (TFTs) using an amorphous carbon-indium-zinc oxide (a-CIZO) as an active-channel layer deposited via radio-frequency sputtering on atomic layer deposition grown Al2O3 substrates at room temperature. The deposited a-CIZO TFT postannealed at 250°C exhibited a saturation field effect mobility of 32.3 cm2/V·s, a subthreshold swing of 0.55 V/decade, a threshold voltage of 11.2 V, and an ON/OFF current ratio of 6.2 × 107. Moreover, the a-CIZO TFTs showed with a good bias stability.
AB - We have fabricated thin-film transistors (TFTs) using an amorphous carbon-indium-zinc oxide (a-CIZO) as an active-channel layer deposited via radio-frequency sputtering on atomic layer deposition grown Al2O3 substrates at room temperature. The deposited a-CIZO TFT postannealed at 250°C exhibited a saturation field effect mobility of 32.3 cm2/V·s, a subthreshold swing of 0.55 V/decade, a threshold voltage of 11.2 V, and an ON/OFF current ratio of 6.2 × 107. Moreover, the a-CIZO TFTs showed with a good bias stability.
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U2 - 10.1109/LED.2014.2345740
DO - 10.1109/LED.2014.2345740
M3 - Article
AN - SCOPUS:84907606337
VL - 35
SP - 1028
EP - 1030
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 10
M1 - 6902754
ER -