Stability improvement of gallium indium zinc oxide thin film transistors by post-thermal annealing

Ji Sim Jung, Kyoung Seok Son, Tae Sang Kim, Myung Kwan Ryu, Kyung Bae Park, Byung Wook Yoo, Jang Yeon Kwon, Sang Yoon Le, Jong Min Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

The effects of post-thermal annealing on the stability of Ga 2O3-In2O3-ZnO (GIZO) thin film transistors (TFT) were investigated by comparing the GIZO TFTs annealed for 3 hour and for 65 hours under high-field bias stress, light illumination, and long-term storage in air. We found that the poor stability of the GIZO TFTs under these stresses was remarkably improved after 65 hours' post-thermal annealing at 250 °C. The improvement of the stability is ascribed to the reduction of the trap sites in the GIZO layer and curing of weak atomic bonds otherwise susceptible to breaking during the stress.

Original languageEnglish
Title of host publicationECS Transactions - Thin Film Transistors 9, TFT 9
Pages309-313
Number of pages5
Edition9
DOIs
Publication statusPublished - 2008 Dec 1
EventThin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 132008 Oct 16

Publication series

NameECS Transactions
Number9
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherThin Film Transistors 9, TFT 9 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1308/10/16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Jung, J. S., Son, K. S., Kim, T. S., Ryu, M. K., Park, K. B., Yoo, B. W., Kwon, J. Y., Le, S. Y., & Kim, J. M. (2008). Stability improvement of gallium indium zinc oxide thin film transistors by post-thermal annealing. In ECS Transactions - Thin Film Transistors 9, TFT 9 (9 ed., pp. 309-313). (ECS Transactions; Vol. 16, No. 9). https://doi.org/10.1149/1.2980568