Stability of Solution-processed ZrInZnO Thin-Film Transistors under Gate Bias Stress

Tae Hoon Jeong, Si Joon Kim, Doo Hyun Yoon, Woong Hee Jeong, Dong Lim Kim, Hyun Soo Lim, Heon Je Kim

Research output: Contribution to journalArticle

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume59
Issue number2
Publication statusPublished - 2011 Aug

Cite this

Jeong, T. H., Kim, S. J., Yoon, D. H., Jeong, W. H., Kim, D. L., Lim, H. S., & Kim, H. J. (2011). Stability of Solution-processed ZrInZnO Thin-Film Transistors under Gate Bias Stress. Journal of the Korean Physical Society, 59(2).