Stability of Solution-processed ZrInZnO Thin-Film Transistors under Gate Bias Stress

Tae Hoon Jeong; Si Joon Kim; Doo Hyun Yoon; Woong Hee Jeong; Dong Lim Kim; Hyun Soo Lim; Heon Je Kim

Stability of Solution-processed ZrInZnO Thin-Film Transistors under Gate Bias Stress

Tae Hoon Jeong, Si Joon Kim, Doo Hyun Yoon, Woong Hee Jeong, Dong Lim Kim, Hyun Soo Lim, Heon Je Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Journal of the Korean Physical Society
Volume	59
Issue number	2
Publication status	Published - 2011 Aug

Cite this

@article{4ab696d7774344f097c5c04a028dca04,

title = "Stability of Solution-processed ZrInZnO Thin-Film Transistors under Gate Bias Stress",

author = "Jeong, {Tae Hoon} and Kim, {Si Joon} and Yoon, {Doo Hyun} and Jeong, {Woong Hee} and Kim, {Dong Lim} and Lim, {Hyun Soo} and Kim, {Heon Je}",

year = "2011",

month = aug,

language = "English",

volume = "59",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "2",

}

TY - JOUR

T1 - Stability of Solution-processed ZrInZnO Thin-Film Transistors under Gate Bias Stress

AU - Jeong, Tae Hoon

AU - Kim, Si Joon

AU - Yoon, Doo Hyun

AU - Jeong, Woong Hee

AU - Kim, Dong Lim

AU - Lim, Hyun Soo

AU - Kim, Heon Je

PY - 2011/8

Y1 - 2011/8

M3 - Article

SN - 0374-4884

VL - 59

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 2

ER -