Stacking-controllable interlayer coupling and symmetric configuration of multilayered mos2

Sachin M. Shinde, Krishna P. Dhakal, Xiang Chen, Won Seok Yun, Jaedong Lee, Hyunmin Kim, Jong Hyun Ahn

Research output: Contribution to journalArticlepeer-review

60 Citations (Scopus)


The stacking order in layered transition-metal dichalcogenides (TMDCs) induces variations in the electronic and interlayer couplings. Therefore, controlling the stacking orientations when synthesizing TMDCs is desirable but remains a significant challenge. Here, we developed and showed the growth kinetics of different shapes and stacking orders in as-grown multi-stacked MoS2 crystals and revealed the stacking-order-induced interlayer separations, spin–orbit couplings (SOCs), and symmetry variations. Raman spectra in AA(A…)-stacked crystals demonstrated blueshifted out-of-plane (A1g) and in-plane (E2g1) phonon frequencies, representing a greater reduction of the van der Waals gap compared to conventional AB(A…)-stacking. Our observations, together with first-principles calculations, revealed distinct excitonic phenomena due to various stacking orientations. As a result, the photoluminescence emission was improved in the AA(A…)-stacking configuration. Additionally, calculations showed that the valence-band maxima (VBM) at the K point of the AA(A…)-stacking configuration was separated into multiple sub-bands, indicating the presence of stronger SOC. We demonstrated that AA(A…)-stacking emitted an intense second-harmonic signal (SHG) as a fingerprint of the more augmented non-centrosymmetric stacking and enabled SOC-induced splitting at the VBM. We further highlighted the superiority of four-wave mixing-correlated SHG microscopy to quickly resolve the symmetries and multi-domain crystalline phases of differently shaped crystals. Our study based on crystals with different shapes and multiple stacking configurations provides a new avenue for development of future optoelectronic devices.

Original languageEnglish
Article numbere468
Pages (from-to)1-13
Number of pages13
JournalNPG Asia Materials
Issue number2
Publication statusPublished - 2018

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF-2015R1A3A2066337) and the DGIST Basic Research Program (17-BT-01) funded by the Ministry of Science and ICT of Korea.

Publisher Copyright:
© The Author(s) 2018.

All Science Journal Classification (ASJC) codes

  • Modelling and Simulation
  • Materials Science(all)
  • Condensed Matter Physics


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