Abstract
Stacking faults in SiC whiskers grown by three different growth mechanisms; vapor-solid (VS), two-stage growth (TS) and vapor-liquid-solid (VLS) mechanism in the carbothermal reduction system were investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The content of stacking faults in SiC whiskers increased with decreasing the diameter of whiskers, i.e. the small diameter whiskers (<1 μm) grown by the VS, TS and VLS mechanisms have heavy stacking faults whereas the large diameter whiskers (>2 μm) grown by the VLS mechanism have little stacking faults. Heavy stacking faults of small diameter whiskers were probably due to the high specific lateral surface area of small diameter whiskers.
| Original language | English |
|---|---|
| Pages (from-to) | 7-12 |
| Number of pages | 6 |
| Journal | Ceramics International |
| Volume | 26 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2000 Jan 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry
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Choi, H. J., & Lee, J. G. (2000). Stacking faults in silicon carbide whiskers. Ceramics International, 26(1), 7-12. https://doi.org/10.1016/S0272-8842(99)00011-5