Abstract
Stacking faults in SiC whiskers grown by three different growth mechanisms; vapor-solid (VS), two-stage growth (TS) and vapor-liquid-solid (VLS) mechanism in the carbothermal reduction system were investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The content of stacking faults in SiC whiskers increased with decreasing the diameter of whiskers, i.e. the small diameter whiskers (<1 μm) grown by the VS, TS and VLS mechanisms have heavy stacking faults whereas the large diameter whiskers (>2 μm) grown by the VLS mechanism have little stacking faults. Heavy stacking faults of small diameter whiskers were probably due to the high specific lateral surface area of small diameter whiskers.
| Original language | English |
|---|---|
| Pages (from-to) | 7-12 |
| Number of pages | 6 |
| Journal | Ceramics International |
| Volume | 26 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2000 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry
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Stacking faults in silicon carbide whiskers. / Choi, Heon-Jin; Lee, June Gunn.
In: Ceramics International, Vol. 26, No. 1, 01.01.2000, p. 7-12.Research output: Contribution to journal › Article
TY - JOUR
T1 - Stacking faults in silicon carbide whiskers
AU - Choi, Heon-Jin
AU - Lee, June Gunn
PY - 2000/1/1
Y1 - 2000/1/1
N2 - Stacking faults in SiC whiskers grown by three different growth mechanisms; vapor-solid (VS), two-stage growth (TS) and vapor-liquid-solid (VLS) mechanism in the carbothermal reduction system were investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The content of stacking faults in SiC whiskers increased with decreasing the diameter of whiskers, i.e. the small diameter whiskers (<1 μm) grown by the VS, TS and VLS mechanisms have heavy stacking faults whereas the large diameter whiskers (>2 μm) grown by the VLS mechanism have little stacking faults. Heavy stacking faults of small diameter whiskers were probably due to the high specific lateral surface area of small diameter whiskers.
AB - Stacking faults in SiC whiskers grown by three different growth mechanisms; vapor-solid (VS), two-stage growth (TS) and vapor-liquid-solid (VLS) mechanism in the carbothermal reduction system were investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The content of stacking faults in SiC whiskers increased with decreasing the diameter of whiskers, i.e. the small diameter whiskers (<1 μm) grown by the VS, TS and VLS mechanisms have heavy stacking faults whereas the large diameter whiskers (>2 μm) grown by the VLS mechanism have little stacking faults. Heavy stacking faults of small diameter whiskers were probably due to the high specific lateral surface area of small diameter whiskers.
UR - http://www.scopus.com/inward/record.url?scp=0034460112&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034460112&partnerID=8YFLogxK
U2 - 10.1016/S0272-8842(99)00011-5
DO - 10.1016/S0272-8842(99)00011-5
M3 - Article
AN - SCOPUS:0034460112
VL - 26
SP - 7
EP - 12
JO - Ceramics International
JF - Ceramics International
SN - 0272-8842
IS - 1
ER -