Stacking faults in silicon carbide whiskers

Heon-Jin Choi, June Gunn Lee

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

Stacking faults in SiC whiskers grown by three different growth mechanisms; vapor-solid (VS), two-stage growth (TS) and vapor-liquid-solid (VLS) mechanism in the carbothermal reduction system were investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The content of stacking faults in SiC whiskers increased with decreasing the diameter of whiskers, i.e. the small diameter whiskers (<1 μm) grown by the VS, TS and VLS mechanisms have heavy stacking faults whereas the large diameter whiskers (>2 μm) grown by the VLS mechanism have little stacking faults. Heavy stacking faults of small diameter whiskers were probably due to the high specific lateral surface area of small diameter whiskers.

Original languageEnglish
Pages (from-to)7-12
Number of pages6
JournalCeramics International
Volume26
Issue number1
DOIs
Publication statusPublished - 2000 Jan 1

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Crystal whiskers
Stacking faults
Silicon carbide
Vapors
Carbothermal reduction
Liquids
Specific surface area
Transmission electron microscopy
X ray diffraction
silicon carbide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Choi, Heon-Jin ; Lee, June Gunn. / Stacking faults in silicon carbide whiskers. In: Ceramics International. 2000 ; Vol. 26, No. 1. pp. 7-12.
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Stacking faults in silicon carbide whiskers. / Choi, Heon-Jin; Lee, June Gunn.

In: Ceramics International, Vol. 26, No. 1, 01.01.2000, p. 7-12.

Research output: Contribution to journalArticle

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