Static and dynamic performance of complementary inverters based on nanosheet α-MoTe2 p-channel and MoS2 n-channel transistors

Atiye Pezeshki, Seyed Hossein Hosseini Shokouh, Pyo Jin Jeon, Iman Shackery, Jin Sung Kim, Il Kwon Oh, Seong Chan Jun, Hyungjun Kim, Seongil Im

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

Molybdenum ditelluride (α-MoTe2) is an emerging transition-metal dichalcogenide (TMD) semiconductor that has been attracting attention due to its favorable optical and electronic properties. Field-effect transistors (FETs) based on few-layer α-MoTe2 nanosheets have previously shown ambipolar behavior with strong p-type and weak n-type conduction. We have employed a direct imprinting technique following mechanical nanosheet exfoliation to fabricate high-performance complementary inverters using α-MoTe2 as the semiconductor for the p-channel FETs and MoS2 as the semiconductor for the n-channel FETs. To avoid ambipolar behavior and produce α-MoTe2 FETs with clean p-channel characteristics, we have employed the highworkfunction metal platinum for the source and drain contacts. As a result, our α-MoTe2 nanosheet p-channel FETs show hole mobilities up to 20 cm2/(V s), on/off ratios up to 105, and a subthreshold slope of 255 mV/decade. For our complementary inverters composed of few-layer α-MoTe2 p-channel FETs and MoS2 n-channel FETs we have obtained voltage gains as high as 33, noise margins as high as 0.38 VDD, a switching delay of 25 ìs, and a static power consumption of a few nanowatts.

Original languageEnglish
Pages (from-to)1118-1125
Number of pages8
JournalACS Nano
Volume10
Issue number1
DOIs
Publication statusPublished - 2016 Jan 26

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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