Static and dynamic performance of complementary inverters based on nanosheet α-MoTe 2 p-channel and MoS 2 n-channel transistors

Atiye Pezeshki, Seyed Hossein Hosseini Shokouh, Pyo Jin Jeon, Iman Shackery, Jin Sung Kim, Il Kwon Oh, Seong Chan Jun, Hyungjun Kim, Seongil Im

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

Molybdenum ditelluride (α-MoTe 2 ) is an emerging transition-metal dichalcogenide (TMD) semiconductor that has been attracting attention due to its favorable optical and electronic properties. Field-effect transistors (FETs) based on few-layer α-MoTe 2 nanosheets have previously shown ambipolar behavior with strong p-type and weak n-type conduction. We have employed a direct imprinting technique following mechanical nanosheet exfoliation to fabricate high-performance complementary inverters using α-MoTe 2 as the semiconductor for the p-channel FETs and MoS 2 as the semiconductor for the n-channel FETs. To avoid ambipolar behavior and produce α-MoTe 2 FETs with clean p-channel characteristics, we have employed the highworkfunction metal platinum for the source and drain contacts. As a result, our α-MoTe 2 nanosheet p-channel FETs show hole mobilities up to 20 cm 2 /(V s), on/off ratios up to 10 5 , and a subthreshold slope of 255 mV/decade. For our complementary inverters composed of few-layer α-MoTe 2 p-channel FETs and MoS 2 n-channel FETs we have obtained voltage gains as high as 33, noise margins as high as 0.38 VDD, a switching delay of 25 ìs, and a static power consumption of a few nanowatts.

Original languageEnglish
Pages (from-to)1118-1125
Number of pages8
JournalACS Nano
Volume10
Issue number1
DOIs
Publication statusPublished - 2016 Jan 26

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inverters
Nanosheets
Field effect transistors
Transistors
transistors
field effect transistors
Semiconductor materials
Platinum metals
Hole mobility
Molybdenum
hole mobility
Electronic properties
molybdenum
Transition metals
margins
emerging
platinum
Electric power utilization
Optical properties
transition metals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Pezeshki, Atiye ; Hosseini Shokouh, Seyed Hossein ; Jeon, Pyo Jin ; Shackery, Iman ; Kim, Jin Sung ; Oh, Il Kwon ; Jun, Seong Chan ; Kim, Hyungjun ; Im, Seongil. / Static and dynamic performance of complementary inverters based on nanosheet α-MoTe 2 p-channel and MoS 2 n-channel transistors In: ACS Nano. 2016 ; Vol. 10, No. 1. pp. 1118-1125.
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Static and dynamic performance of complementary inverters based on nanosheet α-MoTe 2 p-channel and MoS 2 n-channel transistors . / Pezeshki, Atiye; Hosseini Shokouh, Seyed Hossein; Jeon, Pyo Jin; Shackery, Iman; Kim, Jin Sung; Oh, Il Kwon; Jun, Seong Chan; Kim, Hyungjun; Im, Seongil.

In: ACS Nano, Vol. 10, No. 1, 26.01.2016, p. 1118-1125.

Research output: Contribution to journalArticle

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T1 - Static and dynamic performance of complementary inverters based on nanosheet α-MoTe 2 p-channel and MoS 2 n-channel transistors

AU - Pezeshki, Atiye

AU - Hosseini Shokouh, Seyed Hossein

AU - Jeon, Pyo Jin

AU - Shackery, Iman

AU - Kim, Jin Sung

AU - Oh, Il Kwon

AU - Jun, Seong Chan

AU - Kim, Hyungjun

AU - Im, Seongil

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