Static read stability and write ability metrics in FinFET based SRAM considering read and write-assist circuits

Hanwool Jeong, Younghwi Yang, Junha Lee, Jisu Kim, Seong Ook Jung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper evaluates the read stability and write ability metrics of the SRAM not only for the basic bitcell but also for the bitcell with read and write assist circuits. Some metrics cannot be used to properly estimate the yield and the reasons are analyzed. Based on the analysis results, we suggest the read and write metrics which can properly estimate the yield regardless of assist circuits.

Original languageEnglish
Title of host publication2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012
Pages833-836
Number of pages4
DOIs
Publication statusPublished - 2012 Dec 1
Event2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012 - Seville, Seville, Spain
Duration: 2012 Dec 92012 Dec 12

Publication series

Name2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012

Other

Other2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012
CountrySpain
CitySeville, Seville
Period12/12/912/12/12

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Jeong, H., Yang, Y., Lee, J., Kim, J., & Jung, S. O. (2012). Static read stability and write ability metrics in FinFET based SRAM considering read and write-assist circuits. In 2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012 (pp. 833-836). [6463530] (2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012). https://doi.org/10.1109/ICECS.2012.6463530