Statistical modeling of layout-dependent characteristic fluctuations for multi-finger MOSFETs

Chulhyun Park, Junghan Kang, Seong Ook Jung, Ilgu Yun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Large-signal models using extracted parasitic resistances are proposed for multi-finger MOSFETs and the statistical variations of parasitic resistances are investigated using statistical modeling. The extracted model parameters for the proposed models are verified with measured data. The models can explain the large-signal characteristics of multi-finger MOSFETs. Using the equivalent circuit model, the characteristic variations are statistically modeled with varying the gate layout factors and the extracted parasitic resistances. Based on the results, the gate geometry and extracted parasitic resistances, which are closely related to the source bias, can impact on the characteristic fluctuations of multi-finger MOSFETs.

Original languageEnglish
Title of host publication2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China
Duration: 2008 Dec 82008 Dec 10

Publication series

Name2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryChina
CityHong Kong
Period08/12/808/12/10

Fingerprint

Equivalent circuits
Geometry

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Park, C., Kang, J., Jung, S. O., & Yun, I. (2008). Statistical modeling of layout-dependent characteristic fluctuations for multi-finger MOSFETs. In 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC [4760677] (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC). https://doi.org/10.1109/EDSSC.2008.4760677
Park, Chulhyun ; Kang, Junghan ; Jung, Seong Ook ; Yun, Ilgu. / Statistical modeling of layout-dependent characteristic fluctuations for multi-finger MOSFETs. 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 2008. (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC).
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abstract = "Large-signal models using extracted parasitic resistances are proposed for multi-finger MOSFETs and the statistical variations of parasitic resistances are investigated using statistical modeling. The extracted model parameters for the proposed models are verified with measured data. The models can explain the large-signal characteristics of multi-finger MOSFETs. Using the equivalent circuit model, the characteristic variations are statistically modeled with varying the gate layout factors and the extracted parasitic resistances. Based on the results, the gate geometry and extracted parasitic resistances, which are closely related to the source bias, can impact on the characteristic fluctuations of multi-finger MOSFETs.",
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Park, C, Kang, J, Jung, SO & Yun, I 2008, Statistical modeling of layout-dependent characteristic fluctuations for multi-finger MOSFETs. in 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC., 4760677, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Hong Kong, China, 08/12/8. https://doi.org/10.1109/EDSSC.2008.4760677

Statistical modeling of layout-dependent characteristic fluctuations for multi-finger MOSFETs. / Park, Chulhyun; Kang, Junghan; Jung, Seong Ook; Yun, Ilgu.

2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 2008. 4760677 (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Park, Chulhyun

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N2 - Large-signal models using extracted parasitic resistances are proposed for multi-finger MOSFETs and the statistical variations of parasitic resistances are investigated using statistical modeling. The extracted model parameters for the proposed models are verified with measured data. The models can explain the large-signal characteristics of multi-finger MOSFETs. Using the equivalent circuit model, the characteristic variations are statistically modeled with varying the gate layout factors and the extracted parasitic resistances. Based on the results, the gate geometry and extracted parasitic resistances, which are closely related to the source bias, can impact on the characteristic fluctuations of multi-finger MOSFETs.

AB - Large-signal models using extracted parasitic resistances are proposed for multi-finger MOSFETs and the statistical variations of parasitic resistances are investigated using statistical modeling. The extracted model parameters for the proposed models are verified with measured data. The models can explain the large-signal characteristics of multi-finger MOSFETs. Using the equivalent circuit model, the characteristic variations are statistically modeled with varying the gate layout factors and the extracted parasitic resistances. Based on the results, the gate geometry and extracted parasitic resistances, which are closely related to the source bias, can impact on the characteristic fluctuations of multi-finger MOSFETs.

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Park C, Kang J, Jung SO, Yun I. Statistical modeling of layout-dependent characteristic fluctuations for multi-finger MOSFETs. In 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 2008. 4760677. (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC). https://doi.org/10.1109/EDSSC.2008.4760677