Stepwise controlled voltage sensing scheme for high-density ReRAM with multi level cell

Jin Young Chun, Hyun Kook Park, Byungkyu Song, Seong Ook Jung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we study basic read methods of cross-point ReRAM which is a promising next generation memory. Based on this study, we propose a novel sensing method for Multi-Level ReRAM Cell without area penalty or read time degradation. By applying an increasing stepwise voltage to the gate of the nMOS switch that connects the sense amplifier with the cell array, the level of charge sharing between these two elements can be adjusted to a desired level. The proposed scheme achieves linear increase in reading time according cell resistance instead of the exponential in the conventional method. As a result, the reading time is improved by about twice as compared with the conventional method with applying the constant voltage.

Original languageEnglish
Title of host publicationInternational Conference on Electronics, Information and Communication, ICEIC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781538647547
DOIs
Publication statusPublished - 2018 Apr 2
Event17th International Conference on Electronics, Information and Communication, ICEIC 2018 - Honolulu, United States
Duration: 2018 Jan 242018 Jan 27

Publication series

NameInternational Conference on Electronics, Information and Communication, ICEIC 2018
Volume2018-January

Other

Other17th International Conference on Electronics, Information and Communication, ICEIC 2018
CountryUnited States
CityHonolulu
Period18/1/2418/1/27

All Science Journal Classification (ASJC) codes

  • Information Systems
  • Computer Networks and Communications
  • Computer Science Applications
  • Signal Processing
  • Electrical and Electronic Engineering

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  • Cite this

    Chun, J. Y., Park, H. K., Song, B., & Jung, S. O. (2018). Stepwise controlled voltage sensing scheme for high-density ReRAM with multi level cell. In International Conference on Electronics, Information and Communication, ICEIC 2018 (pp. 1-4). (International Conference on Electronics, Information and Communication, ICEIC 2018; Vol. 2018-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ELINFOCOM.2018.8330599