TY - GEN
T1 - Stepwise controlled voltage sensing scheme for high-density ReRAM with multi level cell
AU - Chun, Jin Young
AU - Park, Hyun Kook
AU - Song, Byungkyu
AU - Jung, Seong Ook
N1 - Publisher Copyright:
© 2018 Institute of Electronics and Information Engineers.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018/4/2
Y1 - 2018/4/2
N2 - In this paper, we study basic read methods of cross-point ReRAM which is a promising next generation memory. Based on this study, we propose a novel sensing method for Multi-Level ReRAM Cell without area penalty or read time degradation. By applying an increasing stepwise voltage to the gate of the nMOS switch that connects the sense amplifier with the cell array, the level of charge sharing between these two elements can be adjusted to a desired level. The proposed scheme achieves linear increase in reading time according cell resistance instead of the exponential in the conventional method. As a result, the reading time is improved by about twice as compared with the conventional method with applying the constant voltage.
AB - In this paper, we study basic read methods of cross-point ReRAM which is a promising next generation memory. Based on this study, we propose a novel sensing method for Multi-Level ReRAM Cell without area penalty or read time degradation. By applying an increasing stepwise voltage to the gate of the nMOS switch that connects the sense amplifier with the cell array, the level of charge sharing between these two elements can be adjusted to a desired level. The proposed scheme achieves linear increase in reading time according cell resistance instead of the exponential in the conventional method. As a result, the reading time is improved by about twice as compared with the conventional method with applying the constant voltage.
UR - http://www.scopus.com/inward/record.url?scp=85048573829&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85048573829&partnerID=8YFLogxK
U2 - 10.23919/ELINFOCOM.2018.8330599
DO - 10.23919/ELINFOCOM.2018.8330599
M3 - Conference contribution
AN - SCOPUS:85048573829
T3 - International Conference on Electronics, Information and Communication, ICEIC 2018
SP - 1
EP - 4
BT - International Conference on Electronics, Information and Communication, ICEIC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 17th International Conference on Electronics, Information and Communication, ICEIC 2018
Y2 - 24 January 2018 through 27 January 2018
ER -