Stimulated emission at 300 K from photopumped GaN grown by plasma-assisted molecular beam epitaxy with an inductively coupled plasma source

O. Gluschenkov, J. M. Myoung, K. H. Shim, K. Kim, Z. G. Figen, J. Gao, J. G. Eden

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

GaN epilayers have been grown on basal plane (0001) sapphire by plasma-assisted molecular beam epitaxy (MBE) with a novel, inductively coupled nitrogen plasma source. Films grown at 700 °C generate stimulated emission at 300 K when optically pumped in vertical geometry with ∼3.5 eV (λ = 355 nm) photons. The extrapolated pump power threshold is ∼3.6 MW cm-2 which corresponds to an absorbed value of 700 kW cm-2 and a peak carrier number density of ∼4×1019 cm-3.

Original languageEnglish
Pages (from-to)811-813
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number7
DOIs
Publication statusPublished - 1997 Feb 17

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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