The effects of the oxidation of Si1 - xCx films (x = 0.0125) on Si (100) substrates were evaluated. Epitaxial Si 1 - xCx (x = 0.0125) films were deposited by ultrahigh-vacuum chemical vapor deposition at 600 °C. Oxidation at 800 °C and 900 °C under an O2 ambient in a tube furnace resulted in a decrease in substitutional C concentration, due to the formation of interstitial carbon or β-SiC precipitation. Transmission electron microscopy analyses indicated that the formation of β-SiC on the Si 1 - xCx layer occurred when the oxidation temperature exceeded 900 °C. This indicates that relaxation of compressive stress in the depth direction occurred as the result of the formation of β-SiC. No evidence was found for the segregation of carbon at the top of the Si 1 - xCx layers during the oxidation of the Si 1 - xCx layer unlike the Ge pile up that occurs during the oxidation of Si1 - xGex layers.
Bibliographical noteFunding Information:
This work was financially supported by the “Next generation substrate technology for high-performance semiconductor devices (Grant No. KI002083 )” of MKE , and IT R&D program of MKE/KEIT [ 10039174 , Technology Development of 22 nm level Foundry Device and PDK].
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry