Strain behavior of epitaxial Si1 - xCx films on silicon substrates during dry oxidation

S. W. Kim, J. H. Yoo, S. M. Koo, H. J. Lee, Dae Hong Ko

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The effects of the oxidation of Si1 - xCx films (x = 0.0125) on Si (100) substrates were evaluated. Epitaxial Si 1 - xCx (x = 0.0125) films were deposited by ultrahigh-vacuum chemical vapor deposition at 600 °C. Oxidation at 800 °C and 900 °C under an O2 ambient in a tube furnace resulted in a decrease in substitutional C concentration, due to the formation of interstitial carbon or β-SiC precipitation. Transmission electron microscopy analyses indicated that the formation of β-SiC on the Si 1 - xCx layer occurred when the oxidation temperature exceeded 900 °C. This indicates that relaxation of compressive stress in the depth direction occurred as the result of the formation of β-SiC. No evidence was found for the segregation of carbon at the top of the Si 1 - xCx layers during the oxidation of the Si 1 - xCx layer unlike the Ge pile up that occurs during the oxidation of Si1 - xGex layers.

Original languageEnglish
Pages (from-to)226-230
Number of pages5
JournalThin Solid Films
Volume546
DOIs
Publication statusPublished - 2013 Nov 1

Fingerprint

Silicon
Oxidation
oxidation
silicon
Substrates
Carbon
carbon
Ultrahigh vacuum
piles
Compressive stress
ultrahigh vacuum
Piles
furnaces
Chemical vapor deposition
interstitials
Furnaces
vapor deposition
tubes
Transmission electron microscopy
transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kim, S. W. ; Yoo, J. H. ; Koo, S. M. ; Lee, H. J. ; Ko, Dae Hong. / Strain behavior of epitaxial Si1 - xCx films on silicon substrates during dry oxidation. In: Thin Solid Films. 2013 ; Vol. 546. pp. 226-230.
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Strain behavior of epitaxial Si1 - xCx films on silicon substrates during dry oxidation. / Kim, S. W.; Yoo, J. H.; Koo, S. M.; Lee, H. J.; Ko, Dae Hong.

In: Thin Solid Films, Vol. 546, 01.11.2013, p. 226-230.

Research output: Contribution to journalArticle

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AB - The effects of the oxidation of Si1 - xCx films (x = 0.0125) on Si (100) substrates were evaluated. Epitaxial Si 1 - xCx (x = 0.0125) films were deposited by ultrahigh-vacuum chemical vapor deposition at 600 °C. Oxidation at 800 °C and 900 °C under an O2 ambient in a tube furnace resulted in a decrease in substitutional C concentration, due to the formation of interstitial carbon or β-SiC precipitation. Transmission electron microscopy analyses indicated that the formation of β-SiC on the Si 1 - xCx layer occurred when the oxidation temperature exceeded 900 °C. This indicates that relaxation of compressive stress in the depth direction occurred as the result of the formation of β-SiC. No evidence was found for the segregation of carbon at the top of the Si 1 - xCx layers during the oxidation of the Si 1 - xCx layer unlike the Ge pile up that occurs during the oxidation of Si1 - xGex layers.

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