Strain behavior of epitaxial Si1 - xCx films on silicon substrates during dry oxidation

S. W. Kim, J. H. Yoo, S. M. Koo, H. J. Lee, D. H. Ko

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2 Citations (Scopus)


The effects of the oxidation of Si1 - xCx films (x = 0.0125) on Si (100) substrates were evaluated. Epitaxial Si 1 - xCx (x = 0.0125) films were deposited by ultrahigh-vacuum chemical vapor deposition at 600 °C. Oxidation at 800 °C and 900 °C under an O2 ambient in a tube furnace resulted in a decrease in substitutional C concentration, due to the formation of interstitial carbon or β-SiC precipitation. Transmission electron microscopy analyses indicated that the formation of β-SiC on the Si 1 - xCx layer occurred when the oxidation temperature exceeded 900 °C. This indicates that relaxation of compressive stress in the depth direction occurred as the result of the formation of β-SiC. No evidence was found for the segregation of carbon at the top of the Si 1 - xCx layers during the oxidation of the Si 1 - xCx layer unlike the Ge pile up that occurs during the oxidation of Si1 - xGex layers.

Original languageEnglish
Pages (from-to)226-230
Number of pages5
JournalThin Solid Films
Publication statusPublished - 2013 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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