Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex

B. G. Min; J. H. Yoo; H. C. Sohn; D. H. Ko; M. H. Cho; T. W. Lee

doi:10.1149/1.2838040

Strain behaviors of Si_1-xGe_x grown on oxidized and etched Si_1-xGe_x

B. G. Min, J. H. Yoo, H. C. Sohn, D. H. Ko, M. H. Cho, T. W. Lee

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.

Original language	English
Pages (from-to)	H96-H98
Journal	Electrochemical and Solid-State Letters
Volume	11
Issue number	4
DOIs	https://doi.org/10.1149/1.2838040
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

Access to Document

10.1149/1.2838040

Fingerprint Dive into the research topics of 'Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex'. Together they form a unique fingerprint.

Cite this

@article{b21bd7ae0e2a42b78435d8057d80f3ab,

title = "Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex",

abstract = "The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.",

author = "Min, {B. G.} and Yoo, {J. H.} and Sohn, {H. C.} and Ko, {D. H.} and Cho, {M. H.} and Lee, {T. W.}",

year = "2008",

doi = "10.1149/1.2838040",

language = "English",

volume = "11",

pages = "H96--H98",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "4",

}

TY - JOUR

T1 - Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex

AU - Min, B. G.

AU - Yoo, J. H.

AU - Sohn, H. C.

AU - Ko, D. H.

AU - Cho, M. H.

AU - Lee, T. W.

PY - 2008

Y1 - 2008

N2 - The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.

AB - The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.

UR - http://www.scopus.com/inward/record.url?scp=39349093152&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39349093152&partnerID=8YFLogxK

U2 - 10.1149/1.2838040

DO - 10.1149/1.2838040

M3 - Article

AN - SCOPUS:39349093152

VL - 11

SP - H96-H98

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 4

ER -

Strain behaviors of Si_1-xGe_x grown on oxidized and etched Si_1-xGe_x

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint Dive into the research topics of 'Strain behaviors of Si<sub>1-x</sub>Ge<sub>x</sub> grown on oxidized and etched Si<sub>1-x</sub>Ge<sub>x</sub>'. Together they form a unique fingerprint.

Cite this