Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex

B. G. Min; J. H. Yoo; H. C. Sohn; D. H. Ko; M. H. Cho; T. W. Lee

doi:10.1149/1.2838040

Strain behaviors of Si_1-xGe_x grown on oxidized and etched Si_1-xGe_x

B. G. Min, J. H. Yoo, H. C. Sohn, D. H. Ko, M. H. Cho, T. W. Lee

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.

Original language	English
Pages (from-to)	H96-H98
Journal	Electrochemical and Solid-State Letters
Volume	11
Issue number	4
DOIs	https://doi.org/10.1149/1.2838040
Publication status	Published - 2008 Feb 22

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All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

Cite this

Min, B. G., Yoo, J. H., Sohn, H. C., Ko, D. H., Cho, M. H., & Lee, T. W. (2008). Strain behaviors of Si_1-xGe_x grown on oxidized and etched Si_1-xGe_x. Electrochemical and Solid-State Letters, 11(4), H96-H98. https://doi.org/10.1149/1.2838040

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AU - Min, B. G.

AU - Yoo, J. H.

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AU - Cho, M. H.

AU - Lee, T. W.

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10.1149/1.2838040