Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex

B. G. Min; J. H. Yoo; H. C. Sohn; D. H. Ko; M. H. Cho; T. W. Lee

doi:10.1149/1.2838040

Strain behaviors of Si_1-xGe_x grown on oxidized and etched Si_1-xGe_x

B. G. Min, J. H. Yoo, H. C. Sohn, D. H. Ko, M. H. Cho, T. W. Lee

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3 Citations (Scopus)

Abstract

The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.

Original language	English
Pages (from-to)	H96-H98
Journal	Electrochemical and Solid-State Letters
Volume	11
Issue number	4
DOIs	https://doi.org/10.1149/1.2838040
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.2838040

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abstract = "The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.",

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T1 - Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex

AU - Min, B. G.

AU - Yoo, J. H.

AU - Sohn, H. C.

AU - Ko, D. H.

AU - Cho, M. H.

AU - Lee, T. W.

PY - 2008

Y1 - 2008

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AB - The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.

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Strain behaviors of Si_1-xGe_x grown on oxidized and etched Si_1-xGe_x

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