Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex

B. G. Min, J. H. Yoo, H. C. Sohn, D. H. Ko, M. H. Cho, T. W. Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.

Original languageEnglish
Pages (from-to)H96-H98
JournalElectrochemical and Solid-State Letters
Volume11
Issue number4
DOIs
Publication statusPublished - 2008 Feb 22

Fingerprint

oxidation
cleaning
ultrahigh vacuum
Oxidation
vapor deposition
Ultrahigh vacuum
Raman spectra
Raman scattering
Chemical vapor deposition
Cleaning
shift
curves
coefficients
scattering
X rays
x rays
Substrates
temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

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abstract = "The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.",
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Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex. / Min, B. G.; Yoo, J. H.; Sohn, H. C.; Ko, D. H.; Cho, M. H.; Lee, T. W.

In: Electrochemical and Solid-State Letters, Vol. 11, No. 4, 22.02.2008, p. H96-H98.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex

AU - Min, B. G.

AU - Yoo, J. H.

AU - Sohn, H. C.

AU - Ko, D. H.

AU - Cho, M. H.

AU - Lee, T. W.

PY - 2008/2/22

Y1 - 2008/2/22

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AB - The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.

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