Abstract
The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.
| Original language | English |
|---|---|
| Pages (from-to) | H96-H98 |
| Journal | Electrochemical and Solid-State Letters |
| Volume | 11 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2008 Feb 22 |
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All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering
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Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex. / Min, B. G.; Yoo, J. H.; Sohn, H. C.; Ko, D. H.; Cho, M. H.; Lee, T. W.
In: Electrochemical and Solid-State Letters, Vol. 11, No. 4, 22.02.2008, p. H96-H98.Research output: Contribution to journal › Article
TY - JOUR
T1 - Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex
AU - Min, B. G.
AU - Yoo, J. H.
AU - Sohn, H. C.
AU - Ko, D. H.
AU - Cho, M. H.
AU - Lee, T. W.
PY - 2008/2/22
Y1 - 2008/2/22
N2 - The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.
AB - The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.
UR - http://www.scopus.com/inward/record.url?scp=39349093152&partnerID=8YFLogxK
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U2 - 10.1149/1.2838040
DO - 10.1149/1.2838040
M3 - Article
AN - SCOPUS:39349093152
VL - 11
SP - H96-H98
JO - Electrochemical and Solid-State Letters
JF - Electrochemical and Solid-State Letters
SN - 1099-0062
IS - 4
ER -