Strain behaviors of Si 1-x Ge x grown on oxidized and etched Si 1-x Ge x

B. G. Min, J. H. Yoo, Hyunchul Sohn, Dae Hong Ko, Mann-Ho Cho, T. W. Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume11
Issue number4
DOIs
Publication statusPublished - 2008 Feb 22

Fingerprint

oxidation
cleaning
ultrahigh vacuum
Oxidation
vapor deposition
Ultrahigh vacuum
Raman spectra
Raman scattering
Chemical vapor deposition
Cleaning
shift
curves
coefficients
scattering
X rays
x rays
Substrates
temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

@article{b21bd7ae0e2a42b78435d8057d80f3ab,
title = "Strain behaviors of Si 1-x Ge x grown on oxidized and etched Si 1-x Ge x",
abstract = "The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.",
author = "Min, {B. G.} and Yoo, {J. H.} and Hyunchul Sohn and Ko, {Dae Hong} and Mann-Ho Cho and Lee, {T. W.}",
year = "2008",
month = "2",
day = "22",
doi = "10.1149/1.2838040",
language = "English",
volume = "11",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "4",

}

Strain behaviors of Si 1-x Ge x grown on oxidized and etched Si 1-x Ge x . / Min, B. G.; Yoo, J. H.; Sohn, Hyunchul; Ko, Dae Hong; Cho, Mann-Ho; Lee, T. W.

In: Electrochemical and Solid-State Letters, Vol. 11, No. 4, 22.02.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Strain behaviors of Si 1-x Ge x grown on oxidized and etched Si 1-x Ge x

AU - Min, B. G.

AU - Yoo, J. H.

AU - Sohn, Hyunchul

AU - Ko, Dae Hong

AU - Cho, Mann-Ho

AU - Lee, T. W.

PY - 2008/2/22

Y1 - 2008/2/22

N2 - The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.

AB - The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.

UR - http://www.scopus.com/inward/record.url?scp=39349093152&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39349093152&partnerID=8YFLogxK

U2 - 10.1149/1.2838040

DO - 10.1149/1.2838040

M3 - Article

VL - 11

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 4

ER -