Strain behaviors of Si1-xGex grown on oxidized and etched Si1-xGex

B. G. Min, J. H. Yoo, H. C. Sohn, D. H. Ko, M. H. Cho, T. W. Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The strain of Si1-x Gex (x=0.15) was controlled by oxidation temperature, time, and initial Ge fraction in underlying Si1-x Gex. Followed by oxidation and HF cleaning of Si1-x Gex, epi- Si1-x Gex (x=0.15) films were deposited on the Ge pileup layer, which is formed by the ultrahigh-vacuum chemical vapor deposition technique at 550°C. Through the X-ray rocking curve measurements and Raman scattering measurements, the strain-shift coefficient [b(x)] was evaluated. By using oxidized and etched Si1-x Gex for the substrate, the strain of deposited Si1-x Gex was changed from the partially relaxed to the tensile-strained state, a method for growing relaxed Si1-x Gex.

Original languageEnglish
Pages (from-to)H96-H98
JournalElectrochemical and Solid-State Letters
Volume11
Issue number4
DOIs
Publication statusPublished - 2008 Feb 22

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this