Abstract
This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si1-xGex stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.
Original language | English |
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Article number | 083104 |
Journal | Applied Physics Letters |
Volume | 105 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2014 Aug 25 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)