Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

Sun Wook Kim, Dae Seop Byeon, Hyunchul Jang, Sang Mo Koo, Hoo Jeong Lee, Dae Hong Ko

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si1-xGex stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.

Original languageEnglish
Article number083104
JournalApplied Physics Letters
Volume105
Issue number8
DOIs
Publication statusPublished - 2014 Aug 25

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fins
field effect transistors
electron diffraction
strain distribution
finite element method

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Sun Wook ; Byeon, Dae Seop ; Jang, Hyunchul ; Koo, Sang Mo ; Lee, Hoo Jeong ; Ko, Dae Hong. / Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction. In: Applied Physics Letters. 2014 ; Vol. 105, No. 8.
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Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction. / Kim, Sun Wook; Byeon, Dae Seop; Jang, Hyunchul; Koo, Sang Mo; Lee, Hoo Jeong; Ko, Dae Hong.

In: Applied Physics Letters, Vol. 105, No. 8, 083104, 25.08.2014.

Research output: Contribution to journalArticle

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