Abstract
This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si1-xGex stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.
| Original language | English |
|---|---|
| Article number | 083104 |
| Journal | Applied Physics Letters |
| Volume | 105 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2014 Aug 25 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction. / Kim, Sun Wook; Byeon, Dae Seop; Jang, Hyunchul; Koo, Sang Mo; Lee, Hoo Jeong; Ko, Dae Hong.
In: Applied Physics Letters, Vol. 105, No. 8, 083104, 25.08.2014.Research output: Contribution to journal › Article
TY - JOUR
T1 - Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction
AU - Kim, Sun Wook
AU - Byeon, Dae Seop
AU - Jang, Hyunchul
AU - Koo, Sang Mo
AU - Lee, Hoo Jeong
AU - Ko, Dae Hong
PY - 2014/8/25
Y1 - 2014/8/25
N2 - This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si1-xGex stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.
AB - This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si1-xGex stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.
UR - http://www.scopus.com/inward/record.url?scp=84907313353&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84907313353&partnerID=8YFLogxK
U2 - 10.1063/1.4893926
DO - 10.1063/1.4893926
M3 - Article
AN - SCOPUS:84907313353
VL - 105
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 8
M1 - 083104
ER -