Abstract
This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si1-xGex stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.
| Original language | English |
|---|---|
| Article number | 083104 |
| Journal | Applied Physics Letters |
| Volume | 105 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2014 Aug 25 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Kim, S. W., Byeon, D. S., Jang, H., Koo, S. M., Lee, H. J., & Ko, D. H. (2014). Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction. Applied Physics Letters, 105(8), [083104]. https://doi.org/10.1063/1.4893926