Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

Sun Wook Kim; Dae Seop Byeon; Hyunchul Jang; Sang Mo Koo; Hoo Jeong Lee; Dae Hong Ko

doi:10.1063/1.4893926

Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

Sun Wook Kim, Dae Seop Byeon, Hyunchul Jang, Sang Mo Koo, Hoo Jeong Lee, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si_1-xGe_x stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.

Original language	English
Article number	083104
Journal	Applied Physics Letters
Volume	105
Issue number	8
DOIs	https://doi.org/10.1063/1.4893926
Publication status	Published - 2014 Aug 25

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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abstract = "This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si1-xGex stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.",

author = "Kim, {Sun Wook} and Byeon, {Dae Seop} and Hyunchul Jang and Koo, {Sang Mo} and Lee, {Hoo Jeong} and Ko, {Dae Hong}",

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AU - Byeon, Dae Seop

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AU - Koo, Sang Mo

AU - Lee, Hoo Jeong

AU - Ko, Dae Hong

PY - 2014/8/25

Y1 - 2014/8/25

N2 - This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si1-xGex stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.

AB - This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si1-xGex stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.

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Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

Abstract

All Science Journal Classification (ASJC) codes

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