Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

Sun Wook Kim; Dae Seop Byeon; Hyunchul Jang; Sang Mo Koo; Hoo Jeong Lee; Dae Hong Ko

doi:10.1063/1.4893926

Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

Sun Wook Kim, Dae Seop Byeon, Hyunchul Jang, Sang Mo Koo, Hoo Jeong Lee, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si_1-xGe_x stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.

Original language	English
Article number	083104
Journal	Applied Physics Letters
Volume	105
Issue number	8
DOIs	https://doi.org/10.1063/1.4893926
Publication status	Published - 2014 Aug 25

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4893926

Fingerprint Dive into the research topics of 'Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction'. Together they form a unique fingerprint.

Cite this

@article{3d225c4a4df44242b35fb7f8cc1d20ed,

title = "Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction",

abstract = "This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si1-xGex stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.",

author = "Kim, {Sun Wook} and Byeon, {Dae Seop} and Hyunchul Jang and Koo, {Sang Mo} and Lee, {Hoo Jeong} and Ko, {Dae Hong}",

year = "2014",

month = aug,

day = "25",

doi = "10.1063/1.4893926",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

AU - Kim, Sun Wook

AU - Byeon, Dae Seop

AU - Jang, Hyunchul

AU - Koo, Sang Mo

AU - Lee, Hoo Jeong

AU - Ko, Dae Hong

PY - 2014/8/25

Y1 - 2014/8/25

N2 - This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si1-xGex stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.

AB - This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si1-xGex stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.

UR - http://www.scopus.com/inward/record.url?scp=84907313353&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907313353&partnerID=8YFLogxK

U2 - 10.1063/1.4893926

DO - 10.1063/1.4893926

M3 - Article

AN - SCOPUS:84907313353

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

M1 - 083104

ER -