Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

Engineering

• Field-Effect Transistor 66%
• Electron Diffraction 66%
• Drain Region 33%
• Fin Width 33%
• Strain Analysis 33%
• Channel Region 33%
• Dimensional Factor 33%
• Element Method 33%
• Design 33%
• Thickness 33%

Material Science

• Strain 100%
• Finite Element Methods 66%
• Characterization 33%
• Devices 33%

Physics

• Electron Diffraction 66%
• Strain Distribution 33%
• Information 33%