Strain-conserving doping of a pseudomorphic metastable Ge0.06Si0.94 layer on Si(100) by low-dose BF+2 implantation

Seongil Im, F. Eisen, M. A. Nicolet, M. O. Tanner, K. L. Wang, N. D. Theodore

Research output: Contribution to journalArticle

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Abstract

A thick (260 nm) pseudomorphic metastable n-type Ge0.06A0.94 layer grown by molecular beam epitaxy on an n-type Si(100) substrate was implanted at room temperature with 70 keV BF+2 ions to a dose of 3 × 1013 cm-2, so that a p - n junction was formed in the GeSi layers. The samples were subsequently annealed for 10-40 s in a lamp furnace with a nitrogen ambient, or for 30 min in a vacuum-tube furnace. The samples were characterized by 2 MeV 4He backscattering/channeling spectrometry, double-crystal x-ray diffractometry, transmission electron microscopy, and by Hall effect measurements using the van der Pauw sample geometry. Samples annealed for either 40 s or 30 min at 800°C exhibit full electrical activation of the boron in the GeSi epilayer without losing their strain. The Hall mobility of the holes is lower than that of p-type Si doped under the same experimental conditions. These results can be attributed to the Hall factor of heavily doped p-type GeSi films which is less than unity while the Hall factor of a heavily doped p-type Si or n-type GeSi film is close to unity. When annealed at 900°C, the strain in both implanted and unimplanted layers is partly relaxed after 30 min, whereas it is not visibly relaxed after 40 s.

Original languageEnglish
Pages (from-to)1695-1699
Number of pages5
JournalJournal of Applied Physics
Volume81
Issue number4
DOIs
Publication statusPublished - 1997 Feb 15

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implantation
dosage
furnaces
unity
vacuum tubes
p-n junctions
luminaires
Hall effect
backscattering
boron
molecular beam epitaxy
activation
nitrogen
transmission electron microscopy
room temperature
geometry
spectroscopy
crystals
ions
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Im, Seongil ; Eisen, F. ; Nicolet, M. A. ; Tanner, M. O. ; Wang, K. L. ; Theodore, N. D. / Strain-conserving doping of a pseudomorphic metastable Ge0.06Si0.94 layer on Si(100) by low-dose BF+2 implantation. In: Journal of Applied Physics. 1997 ; Vol. 81, No. 4. pp. 1695-1699.
@article{ebdf82d6833b4b32a3bdf06b216a9cd1,
title = "Strain-conserving doping of a pseudomorphic metastable Ge0.06Si0.94 layer on Si(100) by low-dose BF+2 implantation",
abstract = "A thick (260 nm) pseudomorphic metastable n-type Ge0.06A0.94 layer grown by molecular beam epitaxy on an n-type Si(100) substrate was implanted at room temperature with 70 keV BF+2 ions to a dose of 3 × 1013 cm-2, so that a p - n junction was formed in the GeSi layers. The samples were subsequently annealed for 10-40 s in a lamp furnace with a nitrogen ambient, or for 30 min in a vacuum-tube furnace. The samples were characterized by 2 MeV 4He backscattering/channeling spectrometry, double-crystal x-ray diffractometry, transmission electron microscopy, and by Hall effect measurements using the van der Pauw sample geometry. Samples annealed for either 40 s or 30 min at 800°C exhibit full electrical activation of the boron in the GeSi epilayer without losing their strain. The Hall mobility of the holes is lower than that of p-type Si doped under the same experimental conditions. These results can be attributed to the Hall factor of heavily doped p-type GeSi films which is less than unity while the Hall factor of a heavily doped p-type Si or n-type GeSi film is close to unity. When annealed at 900°C, the strain in both implanted and unimplanted layers is partly relaxed after 30 min, whereas it is not visibly relaxed after 40 s.",
author = "Seongil Im and F. Eisen and Nicolet, {M. A.} and Tanner, {M. O.} and Wang, {K. L.} and Theodore, {N. D.}",
year = "1997",
month = "2",
day = "15",
doi = "10.1063/1.364026",
language = "English",
volume = "81",
pages = "1695--1699",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

Strain-conserving doping of a pseudomorphic metastable Ge0.06Si0.94 layer on Si(100) by low-dose BF+2 implantation. / Im, Seongil; Eisen, F.; Nicolet, M. A.; Tanner, M. O.; Wang, K. L.; Theodore, N. D.

In: Journal of Applied Physics, Vol. 81, No. 4, 15.02.1997, p. 1695-1699.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Strain-conserving doping of a pseudomorphic metastable Ge0.06Si0.94 layer on Si(100) by low-dose BF+2 implantation

AU - Im, Seongil

AU - Eisen, F.

AU - Nicolet, M. A.

AU - Tanner, M. O.

AU - Wang, K. L.

AU - Theodore, N. D.

PY - 1997/2/15

Y1 - 1997/2/15

N2 - A thick (260 nm) pseudomorphic metastable n-type Ge0.06A0.94 layer grown by molecular beam epitaxy on an n-type Si(100) substrate was implanted at room temperature with 70 keV BF+2 ions to a dose of 3 × 1013 cm-2, so that a p - n junction was formed in the GeSi layers. The samples were subsequently annealed for 10-40 s in a lamp furnace with a nitrogen ambient, or for 30 min in a vacuum-tube furnace. The samples were characterized by 2 MeV 4He backscattering/channeling spectrometry, double-crystal x-ray diffractometry, transmission electron microscopy, and by Hall effect measurements using the van der Pauw sample geometry. Samples annealed for either 40 s or 30 min at 800°C exhibit full electrical activation of the boron in the GeSi epilayer without losing their strain. The Hall mobility of the holes is lower than that of p-type Si doped under the same experimental conditions. These results can be attributed to the Hall factor of heavily doped p-type GeSi films which is less than unity while the Hall factor of a heavily doped p-type Si or n-type GeSi film is close to unity. When annealed at 900°C, the strain in both implanted and unimplanted layers is partly relaxed after 30 min, whereas it is not visibly relaxed after 40 s.

AB - A thick (260 nm) pseudomorphic metastable n-type Ge0.06A0.94 layer grown by molecular beam epitaxy on an n-type Si(100) substrate was implanted at room temperature with 70 keV BF+2 ions to a dose of 3 × 1013 cm-2, so that a p - n junction was formed in the GeSi layers. The samples were subsequently annealed for 10-40 s in a lamp furnace with a nitrogen ambient, or for 30 min in a vacuum-tube furnace. The samples were characterized by 2 MeV 4He backscattering/channeling spectrometry, double-crystal x-ray diffractometry, transmission electron microscopy, and by Hall effect measurements using the van der Pauw sample geometry. Samples annealed for either 40 s or 30 min at 800°C exhibit full electrical activation of the boron in the GeSi epilayer without losing their strain. The Hall mobility of the holes is lower than that of p-type Si doped under the same experimental conditions. These results can be attributed to the Hall factor of heavily doped p-type GeSi films which is less than unity while the Hall factor of a heavily doped p-type Si or n-type GeSi film is close to unity. When annealed at 900°C, the strain in both implanted and unimplanted layers is partly relaxed after 30 min, whereas it is not visibly relaxed after 40 s.

UR - http://www.scopus.com/inward/record.url?scp=0011912671&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0011912671&partnerID=8YFLogxK

U2 - 10.1063/1.364026

DO - 10.1063/1.364026

M3 - Article

AN - SCOPUS:0011912671

VL - 81

SP - 1695

EP - 1699

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

ER -