Abstract
A thick (260 nm) pseudomorphic metastable n-type Ge0.06A0.94 layer grown by molecular beam epitaxy on an n-type Si(100) substrate was implanted at room temperature with 70 keV BF+2 ions to a dose of 3 × 1013 cm-2, so that a p - n junction was formed in the GeSi layers. The samples were subsequently annealed for 10-40 s in a lamp furnace with a nitrogen ambient, or for 30 min in a vacuum-tube furnace. The samples were characterized by 2 MeV 4He backscattering/channeling spectrometry, double-crystal x-ray diffractometry, transmission electron microscopy, and by Hall effect measurements using the van der Pauw sample geometry. Samples annealed for either 40 s or 30 min at 800°C exhibit full electrical activation of the boron in the GeSi epilayer without losing their strain. The Hall mobility of the holes is lower than that of p-type Si doped under the same experimental conditions. These results can be attributed to the Hall factor of heavily doped p-type GeSi films which is less than unity while the Hall factor of a heavily doped p-type Si or n-type GeSi film is close to unity. When annealed at 900°C, the strain in both implanted and unimplanted layers is partly relaxed after 30 min, whereas it is not visibly relaxed after 40 s.
| Original language | English |
|---|---|
| Pages (from-to) | 1695-1699 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 81 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1997 Feb 15 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Strain-conserving doping of a pseudomorphic metastable Ge0.06Si0.94 layer on Si(100) by low-dose BF+2 implantation. / Im, Seongil; Eisen, F.; Nicolet, M. A.; Tanner, M. O.; Wang, K. L.; Theodore, N. D.
In: Journal of Applied Physics, Vol. 81, No. 4, 15.02.1997, p. 1695-1699.Research output: Contribution to journal › Article
TY - JOUR
T1 - Strain-conserving doping of a pseudomorphic metastable Ge0.06Si0.94 layer on Si(100) by low-dose BF+2 implantation
AU - Im, Seongil
AU - Eisen, F.
AU - Nicolet, M. A.
AU - Tanner, M. O.
AU - Wang, K. L.
AU - Theodore, N. D.
PY - 1997/2/15
Y1 - 1997/2/15
N2 - A thick (260 nm) pseudomorphic metastable n-type Ge0.06A0.94 layer grown by molecular beam epitaxy on an n-type Si(100) substrate was implanted at room temperature with 70 keV BF+2 ions to a dose of 3 × 1013 cm-2, so that a p - n junction was formed in the GeSi layers. The samples were subsequently annealed for 10-40 s in a lamp furnace with a nitrogen ambient, or for 30 min in a vacuum-tube furnace. The samples were characterized by 2 MeV 4He backscattering/channeling spectrometry, double-crystal x-ray diffractometry, transmission electron microscopy, and by Hall effect measurements using the van der Pauw sample geometry. Samples annealed for either 40 s or 30 min at 800°C exhibit full electrical activation of the boron in the GeSi epilayer without losing their strain. The Hall mobility of the holes is lower than that of p-type Si doped under the same experimental conditions. These results can be attributed to the Hall factor of heavily doped p-type GeSi films which is less than unity while the Hall factor of a heavily doped p-type Si or n-type GeSi film is close to unity. When annealed at 900°C, the strain in both implanted and unimplanted layers is partly relaxed after 30 min, whereas it is not visibly relaxed after 40 s.
AB - A thick (260 nm) pseudomorphic metastable n-type Ge0.06A0.94 layer grown by molecular beam epitaxy on an n-type Si(100) substrate was implanted at room temperature with 70 keV BF+2 ions to a dose of 3 × 1013 cm-2, so that a p - n junction was formed in the GeSi layers. The samples were subsequently annealed for 10-40 s in a lamp furnace with a nitrogen ambient, or for 30 min in a vacuum-tube furnace. The samples were characterized by 2 MeV 4He backscattering/channeling spectrometry, double-crystal x-ray diffractometry, transmission electron microscopy, and by Hall effect measurements using the van der Pauw sample geometry. Samples annealed for either 40 s or 30 min at 800°C exhibit full electrical activation of the boron in the GeSi epilayer without losing their strain. The Hall mobility of the holes is lower than that of p-type Si doped under the same experimental conditions. These results can be attributed to the Hall factor of heavily doped p-type GeSi films which is less than unity while the Hall factor of a heavily doped p-type Si or n-type GeSi film is close to unity. When annealed at 900°C, the strain in both implanted and unimplanted layers is partly relaxed after 30 min, whereas it is not visibly relaxed after 40 s.
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U2 - 10.1063/1.364026
DO - 10.1063/1.364026
M3 - Article
AN - SCOPUS:0011912671
VL - 81
SP - 1695
EP - 1699
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 4
ER -