Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides

M. Ghorbani-Asl, S. Borini, A. Kuc, T. Heine

Research output: Contribution to journalArticlepeer-review

224 Citations (Scopus)


Quantum conductance calculations on the mechanically deformed monolayers of MoS2 and WS2 were performed using the nonequlibrium Green's functions method combined with the Landauer-Büttiker approach for ballistic transport together with the density-functional-based tight binding method. Tensile strain causes significant changes in the electronic structure of transition-metal dichalcogenide single layers and eventually the semiconductor-metal transition occurs for elongations as large as 11% for the 2D-isotropic deformations in the hexagonal structure. This transition enhances the electron transport in otherwise semiconducting materials.

Original languageEnglish
Article number235434
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number23
Publication statusPublished - 2013 Jun 26

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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