Strain evolution during the growth of epitaxial Ge layers between narrow oxide trenches

Byongju Kim, Sun Wook Kim, Hyunchul Jang, Jeong Hoon Kim, Sangmo Koo, Dae Hyun Kim, Byoung Gi Min, Se Jeong Park, Jason S. Song, Dae Hong Ko

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We have grown the high quality and compressively strained Ge epilayers on a Si substrate with 40-nm width SiO 2 trench patterns at a growth temperature of 600 °C. Based on (224) reciprocal space mapping measurements of Ge samples with a different thickness, the residual in-plane strain value along the trench direction decreased from -0.74% to -0.42% with increasing thickness of the Ge layer from 150 nm to 180 nm. In addition, the compressive strain along the trench direction (ε1 ¯10 ) was larger than that in the direction perpendicular to the trench (ε 110 ) regardless of the thickness. For example, when Ge was overgrown on a SiO 2 trench, the ε1 ¯10 and ε 110 values were -0.42% and ~0%, respectively. We conclude that the asymmetric strain relaxation behavior of Ge is related to the SiO 2 trench patterns, which prevent the dislocations from gliding. Defects such as a microtwin and/or stacking fault were generated during the coalescence of Ge films having different lattice constants in each Ge layer arising from the different relaxation values. A local strain in Ge, with a high spatial resolution of 2.5 nm, was measured along the two directions by means of a nanobeam electron diffraction method, thus confirming asymmetric strain relaxation and the results are in good agreement with reciprocal space mapping results.

Original languageEnglish
Pages (from-to)308-313
Number of pages6
JournalJournal of Crystal Growth
Volume401
DOIs
Publication statusPublished - 2014 Sep 1

Fingerprint

Oxides
Strain relaxation
oxides
Epilayers
Stacking faults
Growth temperature
Coalescence
Electron diffraction
gliding
Lattice constants
plane strain
crystal defects
coalescing
Defects
electron diffraction
spatial resolution
Substrates
Direction compound
high resolution
defects

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Kim, Byongju ; Kim, Sun Wook ; Jang, Hyunchul ; Kim, Jeong Hoon ; Koo, Sangmo ; Kim, Dae Hyun ; Min, Byoung Gi ; Park, Se Jeong ; Song, Jason S. ; Ko, Dae Hong. / Strain evolution during the growth of epitaxial Ge layers between narrow oxide trenches. In: Journal of Crystal Growth. 2014 ; Vol. 401. pp. 308-313.
@article{a4a7b08b6a9d40069cda812bdfb33f04,
title = "Strain evolution during the growth of epitaxial Ge layers between narrow oxide trenches",
abstract = "We have grown the high quality and compressively strained Ge epilayers on a Si substrate with 40-nm width SiO 2 trench patterns at a growth temperature of 600 °C. Based on (224) reciprocal space mapping measurements of Ge samples with a different thickness, the residual in-plane strain value along the trench direction decreased from -0.74{\%} to -0.42{\%} with increasing thickness of the Ge layer from 150 nm to 180 nm. In addition, the compressive strain along the trench direction (ε1 ¯10 ) was larger than that in the direction perpendicular to the trench (ε 110 ) regardless of the thickness. For example, when Ge was overgrown on a SiO 2 trench, the ε1 ¯10 and ε 110 values were -0.42{\%} and ~0{\%}, respectively. We conclude that the asymmetric strain relaxation behavior of Ge is related to the SiO 2 trench patterns, which prevent the dislocations from gliding. Defects such as a microtwin and/or stacking fault were generated during the coalescence of Ge films having different lattice constants in each Ge layer arising from the different relaxation values. A local strain in Ge, with a high spatial resolution of 2.5 nm, was measured along the two directions by means of a nanobeam electron diffraction method, thus confirming asymmetric strain relaxation and the results are in good agreement with reciprocal space mapping results.",
author = "Byongju Kim and Kim, {Sun Wook} and Hyunchul Jang and Kim, {Jeong Hoon} and Sangmo Koo and Kim, {Dae Hyun} and Min, {Byoung Gi} and Park, {Se Jeong} and Song, {Jason S.} and Ko, {Dae Hong}",
year = "2014",
month = "9",
day = "1",
doi = "10.1016/j.jcrysgro.2013.12.057",
language = "English",
volume = "401",
pages = "308--313",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

Kim, B, Kim, SW, Jang, H, Kim, JH, Koo, S, Kim, DH, Min, BG, Park, SJ, Song, JS & Ko, DH 2014, 'Strain evolution during the growth of epitaxial Ge layers between narrow oxide trenches', Journal of Crystal Growth, vol. 401, pp. 308-313. https://doi.org/10.1016/j.jcrysgro.2013.12.057

Strain evolution during the growth of epitaxial Ge layers between narrow oxide trenches. / Kim, Byongju; Kim, Sun Wook; Jang, Hyunchul; Kim, Jeong Hoon; Koo, Sangmo; Kim, Dae Hyun; Min, Byoung Gi; Park, Se Jeong; Song, Jason S.; Ko, Dae Hong.

In: Journal of Crystal Growth, Vol. 401, 01.09.2014, p. 308-313.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Strain evolution during the growth of epitaxial Ge layers between narrow oxide trenches

AU - Kim, Byongju

AU - Kim, Sun Wook

AU - Jang, Hyunchul

AU - Kim, Jeong Hoon

AU - Koo, Sangmo

AU - Kim, Dae Hyun

AU - Min, Byoung Gi

AU - Park, Se Jeong

AU - Song, Jason S.

AU - Ko, Dae Hong

PY - 2014/9/1

Y1 - 2014/9/1

N2 - We have grown the high quality and compressively strained Ge epilayers on a Si substrate with 40-nm width SiO 2 trench patterns at a growth temperature of 600 °C. Based on (224) reciprocal space mapping measurements of Ge samples with a different thickness, the residual in-plane strain value along the trench direction decreased from -0.74% to -0.42% with increasing thickness of the Ge layer from 150 nm to 180 nm. In addition, the compressive strain along the trench direction (ε1 ¯10 ) was larger than that in the direction perpendicular to the trench (ε 110 ) regardless of the thickness. For example, when Ge was overgrown on a SiO 2 trench, the ε1 ¯10 and ε 110 values were -0.42% and ~0%, respectively. We conclude that the asymmetric strain relaxation behavior of Ge is related to the SiO 2 trench patterns, which prevent the dislocations from gliding. Defects such as a microtwin and/or stacking fault were generated during the coalescence of Ge films having different lattice constants in each Ge layer arising from the different relaxation values. A local strain in Ge, with a high spatial resolution of 2.5 nm, was measured along the two directions by means of a nanobeam electron diffraction method, thus confirming asymmetric strain relaxation and the results are in good agreement with reciprocal space mapping results.

AB - We have grown the high quality and compressively strained Ge epilayers on a Si substrate with 40-nm width SiO 2 trench patterns at a growth temperature of 600 °C. Based on (224) reciprocal space mapping measurements of Ge samples with a different thickness, the residual in-plane strain value along the trench direction decreased from -0.74% to -0.42% with increasing thickness of the Ge layer from 150 nm to 180 nm. In addition, the compressive strain along the trench direction (ε1 ¯10 ) was larger than that in the direction perpendicular to the trench (ε 110 ) regardless of the thickness. For example, when Ge was overgrown on a SiO 2 trench, the ε1 ¯10 and ε 110 values were -0.42% and ~0%, respectively. We conclude that the asymmetric strain relaxation behavior of Ge is related to the SiO 2 trench patterns, which prevent the dislocations from gliding. Defects such as a microtwin and/or stacking fault were generated during the coalescence of Ge films having different lattice constants in each Ge layer arising from the different relaxation values. A local strain in Ge, with a high spatial resolution of 2.5 nm, was measured along the two directions by means of a nanobeam electron diffraction method, thus confirming asymmetric strain relaxation and the results are in good agreement with reciprocal space mapping results.

UR - http://www.scopus.com/inward/record.url?scp=84906967570&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906967570&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2013.12.057

DO - 10.1016/j.jcrysgro.2013.12.057

M3 - Article

VL - 401

SP - 308

EP - 313

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -