Strain evolution of Si1-xGex selective epitaxial growth in steps

S. Koo, S. W. Kim, D. H. Ko

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We studied Si1-xGexepitaxial growth in steps. Epitaxial Si1-xGexfilms were deposited on recessed source/drain structure by ultrahigh vacuum chemical vapor deposition process with different growing steps. Each growing step corresponds from initial stage to over-grown stage. By analyzing microstructures of each step, films depositions and defect generations were investigated. Strain evolution, in addition, was investigated in steps. Nano beam diffraction analysis effectively measured strain generations and distributions in the channel region.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 5
Subtitle of host publicationMaterials, Processing, and Devices
Pages551-555
Number of pages5
Edition9
DOIs
Publication statusPublished - 2012
Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
Duration: 2012 Oct 72012 Oct 12

Publication series

NameECS Transactions
Number9
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period12/10/712/10/12

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Koo, S., Kim, S. W., & Ko, D. H. (2012). Strain evolution of Si1-xGex selective epitaxial growth in steps. In SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices (9 ed., pp. 551-555). (ECS Transactions; Vol. 50, No. 9). https://doi.org/10.1149/05009.0551ecst