Strain-sensitive size modulations in ZnSe/ZnS quantum dots grown on GaAs substrates

Y. G. Kim, Y. S. Joh, J. H. Song, E. D. Sim, K. S. Baek, S. K. Chang, J. I. Lee

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The strain-effects on sizes and emission energies of ZnSe/ZnS quantum dots (QD) were discussed. It was found that the initial strain in the ZnSe QD layer was altered by adjusting the thickness of the ZnS buffer. Consistent blueshift of the ground-state emission from four monolayer ZnSe QD were also observed. Analysis shows that the band-gap engineering was possible through the strain modification.

Original languageEnglish
Pages (from-to)2056-2058
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number11
DOIs
Publication statusPublished - 2004 Sep 13

Bibliographical note

Funding Information:
The authors would like to thank H. B. Kim for assistance in AFM measurements. This work was supported by the Ministry of Information and Communication (MIC) of the Republic of Korea through the project, Advanced Backbone Technology Development (ABTD).

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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