Strain-sensitive size modulations in ZnSe/ZnS quantum dots grown on GaAs substrates

Y. G. Kim; Y. S. Joh; J. H. Song; E. D. Sim; K. S. Baek; S. K. Chang; J. I. Lee

doi:10.1063/1.1790035

Strain-sensitive size modulations in ZnSe/ZnS quantum dots grown on GaAs substrates

Y. G. Kim, Y. S. Joh, J. H. Song, E. D. Sim, K. S. Baek, S. K. Chang, J. I. Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The strain-effects on sizes and emission energies of ZnSe/ZnS quantum dots (QD) were discussed. It was found that the initial strain in the ZnSe QD layer was altered by adjusting the thickness of the ZnS buffer. Consistent blueshift of the ground-state emission from four monolayer ZnSe QD were also observed. Analysis shows that the band-gap engineering was possible through the strain modification.

Original language	English
Pages (from-to)	2056-2058
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.1790035
Publication status	Published - 2004 Sept 13

Bibliographical note

Funding Information:
The authors would like to thank H. B. Kim for assistance in AFM measurements. This work was supported by the Ministry of Information and Communication (MIC) of the Republic of Korea through the project, Advanced Backbone Technology Development (ABTD).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1790035

Cite this

@article{8afc830d592245f8bb2dbb5bb5271dae,

title = "Strain-sensitive size modulations in ZnSe/ZnS quantum dots grown on GaAs substrates",

abstract = "The strain-effects on sizes and emission energies of ZnSe/ZnS quantum dots (QD) were discussed. It was found that the initial strain in the ZnSe QD layer was altered by adjusting the thickness of the ZnS buffer. Consistent blueshift of the ground-state emission from four monolayer ZnSe QD were also observed. Analysis shows that the band-gap engineering was possible through the strain modification.",

author = "Kim, {Y. G.} and Joh, {Y. S.} and Song, {J. H.} and Sim, {E. D.} and Baek, {K. S.} and Chang, {S. K.} and Lee, {J. I.}",

note = "Funding Information: The authors would like to thank H. B. Kim for assistance in AFM measurements. This work was supported by the Ministry of Information and Communication (MIC) of the Republic of Korea through the project, Advanced Backbone Technology Development (ABTD).",

year = "2004",

month = sep,

day = "13",

doi = "10.1063/1.1790035",

language = "English",

volume = "85",

pages = "2056--2058",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Strain-sensitive size modulations in ZnSe/ZnS quantum dots grown on GaAs substrates

AU - Kim, Y. G.

AU - Joh, Y. S.

AU - Song, J. H.

AU - Sim, E. D.

AU - Baek, K. S.

AU - Chang, S. K.

AU - Lee, J. I.

N1 - Funding Information: The authors would like to thank H. B. Kim for assistance in AFM measurements. This work was supported by the Ministry of Information and Communication (MIC) of the Republic of Korea through the project, Advanced Backbone Technology Development (ABTD).

PY - 2004/9/13

Y1 - 2004/9/13

N2 - The strain-effects on sizes and emission energies of ZnSe/ZnS quantum dots (QD) were discussed. It was found that the initial strain in the ZnSe QD layer was altered by adjusting the thickness of the ZnS buffer. Consistent blueshift of the ground-state emission from four monolayer ZnSe QD were also observed. Analysis shows that the band-gap engineering was possible through the strain modification.

AB - The strain-effects on sizes and emission energies of ZnSe/ZnS quantum dots (QD) were discussed. It was found that the initial strain in the ZnSe QD layer was altered by adjusting the thickness of the ZnS buffer. Consistent blueshift of the ground-state emission from four monolayer ZnSe QD were also observed. Analysis shows that the band-gap engineering was possible through the strain modification.

UR - http://www.scopus.com/inward/record.url?scp=5444265962&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5444265962&partnerID=8YFLogxK

U2 - 10.1063/1.1790035

DO - 10.1063/1.1790035

M3 - Article

AN - SCOPUS:5444265962

SN - 0003-6951

VL - 85

SP - 2056

EP - 2058

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Strain-sensitive size modulations in ZnSe/ZnS quantum dots grown on GaAs substrates

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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