The strain-effects on sizes and emission energies of ZnSe/ZnS quantum dots (QD) were discussed. It was found that the initial strain in the ZnSe QD layer was altered by adjusting the thickness of the ZnS buffer. Consistent blueshift of the ground-state emission from four monolayer ZnSe QD were also observed. Analysis shows that the band-gap engineering was possible through the strain modification.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2004 Sept 13|
Bibliographical noteFunding Information:
The authors would like to thank H. B. Kim for assistance in AFM measurements. This work was supported by the Ministry of Information and Communication (MIC) of the Republic of Korea through the project, Advanced Backbone Technology Development (ABTD).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)