Stress-induced anomalous shift of optical band gap in ZnO:Al thin films

Bhaskar Chandra Mohanty, Yeon Hwa Jo, Deuk Ho Yeon, Ik Jin Choi, Yong Soo Cho

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Thickness-dependent stress relaxation and its unreported effect on optical band gap of Al-doped ZnO thin films have been investigated. The thinnest film (∼84 nm) had a stress of -8.39× 109 Nm-2, carrier concentration of 1.73× 1019 cm-3 and optical band gap of 3.69 eV, a value significantly higher than the reported ones. With increase in thickness, magnitude of the stress decreased, and correspondingly a redshift of fundamental absorption band edge was observed. A linear dependence of optical band gap on stress in the films with a coefficient of 54.6 meV/GPa has been observed.

Original languageEnglish
Article number062103
JournalApplied Physics Letters
Issue number6
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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