Stretchable graphene transistors with printed dielectrics and gate electrodes

Seoung Ki Lee, Beom Joon Kim, Houk Jang, Sung Cheol Yoon, Changjin Lee, Byung Hee Hong, John A. Rogers, Jeong Ho Cho, Jong Hyun Ahn

Research output: Contribution to journalArticle

285 Citations (Scopus)

Abstract

With the emergence of human interface technology, the development of new applications based on stretchable electronics such as conformal biosensors and rollable displays are required. However, the difficulty in developing semiconducting materials with high stretchability required for such applications has restricted the range of applications of stretchable electronics. Here, we present stretchable, printable, and transparent transistors composed of monolithically patterned graphene films. This material offers excellent mechanical, electrical, and optical properties, capable of use as semiconducting channels as well as the source/drain electrodes. Such monolithic graphene transistors show hole and electron mobilities of 1188 ± 136 and 422 ± 52 cm2/(V s), respectively, with stable operation at stretching up to 5% even after 1000 or more cycles.

Original languageEnglish
Pages (from-to)4642-4646
Number of pages5
JournalNano letters
Volume11
Issue number11
DOIs
Publication statusPublished - 2011 Nov 9

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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  • Cite this

    Lee, S. K., Kim, B. J., Jang, H., Yoon, S. C., Lee, C., Hong, B. H., Rogers, J. A., Cho, J. H., & Ahn, J. H. (2011). Stretchable graphene transistors with printed dielectrics and gate electrodes. Nano letters, 11(11), 4642-4646. https://doi.org/10.1021/nl202134z