Stretchable integrated circuits consisting of ultrathin Si transistors connected by multilayer graphene are demonstrated. Graphene interconnects act as an effective countervailing component to maintain the electrical performance of Si integrated circuits against external strain. Concentration of the applied strain on the graphene interconnect parts can stably protect the Si active devices against applied strains over 10%.
Bibliographical noteFunding Information:
W.L. and H.J. contributed equally to this work. This work was supported by the Global Frontier Research Center for Advanced Soft Electronics (2014M3A6A5060933) through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology and the Research Program of Korea Institute of Machinery & Materials (SC 1090).
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All Science Journal Classification (ASJC) codes
- Materials Science(all)