Stretchable Si Logic Devices with Graphene Interconnects

Wonho Lee; Houk Jang; Bongkyun Jang; Jae Hyun Kim; Jong Hyun Ahn

doi:10.1002/smll.201502338

Stretchable Si Logic Devices with Graphene Interconnects

Wonho Lee, Houk Jang, Bongkyun Jang, Jae Hyun Kim, Jong Hyun Ahn

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Stretchable integrated circuits consisting of ultrathin Si transistors connected by multilayer graphene are demonstrated. Graphene interconnects act as an effective countervailing component to maintain the electrical performance of Si integrated circuits against external strain. Concentration of the applied strain on the graphene interconnect parts can stably protect the Si active devices against applied strains over 10%.

Original language	English
Pages (from-to)	6272-6277
Number of pages	6
Journal	Small
Volume	11
Issue number	47
DOIs	https://doi.org/10.1002/smll.201502338
Publication status	Published - 2015 Dec 16

Bibliographical note

Funding Information:
W.L. and H.J. contributed equally to this work. This work was supported by the Global Frontier Research Center for Advanced Soft Electronics (2014M3A6A5060933) through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology and the Research Program of Korea Institute of Machinery & Materials (SC 1090).

Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

All Science Journal Classification (ASJC) codes

Biotechnology
Chemistry(all)
Biomaterials
Materials Science(all)

Access to Document

10.1002/smll.201502338

Cite this

@article{33af9d601e3f452abbe9628c1fe3b208,

title = "Stretchable Si Logic Devices with Graphene Interconnects",

abstract = "Stretchable integrated circuits consisting of ultrathin Si transistors connected by multilayer graphene are demonstrated. Graphene interconnects act as an effective countervailing component to maintain the electrical performance of Si integrated circuits against external strain. Concentration of the applied strain on the graphene interconnect parts can stably protect the Si active devices against applied strains over 10%.",

author = "Wonho Lee and Houk Jang and Bongkyun Jang and Kim, {Jae Hyun} and Ahn, {Jong Hyun}",

note = "Funding Information: W.L. and H.J. contributed equally to this work. This work was supported by the Global Frontier Research Center for Advanced Soft Electronics (2014M3A6A5060933) through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology and the Research Program of Korea Institute of Machinery & Materials (SC 1090). Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

year = "2015",

month = dec,

day = "16",

doi = "10.1002/smll.201502338",

language = "English",

volume = "11",

pages = "6272--6277",

journal = "Small",

issn = "1613-6810",

publisher = "Wiley-VCH Verlag",

number = "47",

}

TY - JOUR

T1 - Stretchable Si Logic Devices with Graphene Interconnects

AU - Lee, Wonho

AU - Jang, Houk

AU - Jang, Bongkyun

AU - Kim, Jae Hyun

AU - Ahn, Jong Hyun

N1 - Funding Information: W.L. and H.J. contributed equally to this work. This work was supported by the Global Frontier Research Center for Advanced Soft Electronics (2014M3A6A5060933) through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology and the Research Program of Korea Institute of Machinery & Materials (SC 1090). Publisher Copyright: © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

PY - 2015/12/16

Y1 - 2015/12/16

N2 - Stretchable integrated circuits consisting of ultrathin Si transistors connected by multilayer graphene are demonstrated. Graphene interconnects act as an effective countervailing component to maintain the electrical performance of Si integrated circuits against external strain. Concentration of the applied strain on the graphene interconnect parts can stably protect the Si active devices against applied strains over 10%.

AB - Stretchable integrated circuits consisting of ultrathin Si transistors connected by multilayer graphene are demonstrated. Graphene interconnects act as an effective countervailing component to maintain the electrical performance of Si integrated circuits against external strain. Concentration of the applied strain on the graphene interconnect parts can stably protect the Si active devices against applied strains over 10%.

UR - http://www.scopus.com/inward/record.url?scp=84955215126&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84955215126&partnerID=8YFLogxK

U2 - 10.1002/smll.201502338

DO - 10.1002/smll.201502338

M3 - Article

AN - SCOPUS:84955215126

SN - 1613-6810

VL - 11

SP - 6272

EP - 6277

JO - Small

JF - Small

IS - 47

ER -

Stretchable Si Logic Devices with Graphene Interconnects

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this