Stretchable, transparent zinc oxide thin film transistors

Kyungyea Park, Deok Kyou Lee, Byung Sung Kim, Haseok Jeon, Nae Eung Lee, Dongmok Whang, Hoo Jeong Lee, Youn Jea Kim, Jong Hyun Ahn

Research output: Contribution to journalArticle

104 Citations (Scopus)

Abstract

Stretchable and transparent thin film transistors (TFTs) with intrisically brittle oxide semiconductors are built using a wavy structural configuration that can provide high flexibility and stretchability. After device fabrication procedures including high temperature annealing, the oxide semiconductor-based TFT arrays can be transferred directly to plastic or rubber substrates, without an additional device process, using transfer printing methods. This procedure can avoid some of the thermal degradation problems associated with plastic or rubber substrates by separating them from the annealing procedure needed to improve the device performance. These design and fabrication methods offer the possibility of developing a new format of stretchable electronics

Original languageEnglish
Pages (from-to)3577-3582
Number of pages6
JournalAdvanced Functional Materials
Volume20
Issue number20
DOIs
Publication statusPublished - 2010 Oct 22

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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  • Cite this

    Park, K., Lee, D. K., Kim, B. S., Jeon, H., Lee, N. E., Whang, D., Lee, H. J., Kim, Y. J., & Ahn, J. H. (2010). Stretchable, transparent zinc oxide thin film transistors. Advanced Functional Materials, 20(20), 3577-3582. https://doi.org/10.1002/adfm.201001107