Stretchable, transparent zinc oxide thin film transistors

Kyungyea Park, Deok Kyou Lee, Byung Sung Kim, Haseok Jeon, Nae Eung Lee, Dongmok Whang, Hoo Jeong Lee, Youn Jea Kim, Jong Hyun Ahn

Research output: Contribution to journalArticle

95 Citations (Scopus)

Abstract

Stretchable and transparent thin film transistors (TFTs) with intrisically brittle oxide semiconductors are built using a wavy structural configuration that can provide high flexibility and stretchability. After device fabrication procedures including high temperature annealing, the oxide semiconductor-based TFT arrays can be transferred directly to plastic or rubber substrates, without an additional device process, using transfer printing methods. This procedure can avoid some of the thermal degradation problems associated with plastic or rubber substrates by separating them from the annealing procedure needed to improve the device performance. These design and fabrication methods offer the possibility of developing a new format of stretchable electronics

Original languageEnglish
Pages (from-to)3577-3582
Number of pages6
JournalAdvanced Functional Materials
Volume20
Issue number20
DOIs
Publication statusPublished - 2010 Oct 22

Fingerprint

Zinc Oxide
Rubber
Thin film transistors
Zinc oxide
zinc oxides
Oxide films
transistors
Annealing
Plastics
rubber
Fabrication
Substrates
plastics
thin films
Printing
fabrication
Pyrolysis
annealing
Electronic equipment
oxides

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Park, K., Lee, D. K., Kim, B. S., Jeon, H., Lee, N. E., Whang, D., ... Ahn, J. H. (2010). Stretchable, transparent zinc oxide thin film transistors. Advanced Functional Materials, 20(20), 3577-3582. https://doi.org/10.1002/adfm.201001107
Park, Kyungyea ; Lee, Deok Kyou ; Kim, Byung Sung ; Jeon, Haseok ; Lee, Nae Eung ; Whang, Dongmok ; Lee, Hoo Jeong ; Kim, Youn Jea ; Ahn, Jong Hyun. / Stretchable, transparent zinc oxide thin film transistors. In: Advanced Functional Materials. 2010 ; Vol. 20, No. 20. pp. 3577-3582.
@article{41ac4d20c70c4b6aa1cf79840d799890,
title = "Stretchable, transparent zinc oxide thin film transistors",
abstract = "Stretchable and transparent thin film transistors (TFTs) with intrisically brittle oxide semiconductors are built using a wavy structural configuration that can provide high flexibility and stretchability. After device fabrication procedures including high temperature annealing, the oxide semiconductor-based TFT arrays can be transferred directly to plastic or rubber substrates, without an additional device process, using transfer printing methods. This procedure can avoid some of the thermal degradation problems associated with plastic or rubber substrates by separating them from the annealing procedure needed to improve the device performance. These design and fabrication methods offer the possibility of developing a new format of stretchable electronics",
author = "Kyungyea Park and Lee, {Deok Kyou} and Kim, {Byung Sung} and Haseok Jeon and Lee, {Nae Eung} and Dongmok Whang and Lee, {Hoo Jeong} and Kim, {Youn Jea} and Ahn, {Jong Hyun}",
year = "2010",
month = "10",
day = "22",
doi = "10.1002/adfm.201001107",
language = "English",
volume = "20",
pages = "3577--3582",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "Wiley-VCH Verlag",
number = "20",

}

Park, K, Lee, DK, Kim, BS, Jeon, H, Lee, NE, Whang, D, Lee, HJ, Kim, YJ & Ahn, JH 2010, 'Stretchable, transparent zinc oxide thin film transistors', Advanced Functional Materials, vol. 20, no. 20, pp. 3577-3582. https://doi.org/10.1002/adfm.201001107

Stretchable, transparent zinc oxide thin film transistors. / Park, Kyungyea; Lee, Deok Kyou; Kim, Byung Sung; Jeon, Haseok; Lee, Nae Eung; Whang, Dongmok; Lee, Hoo Jeong; Kim, Youn Jea; Ahn, Jong Hyun.

In: Advanced Functional Materials, Vol. 20, No. 20, 22.10.2010, p. 3577-3582.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Stretchable, transparent zinc oxide thin film transistors

AU - Park, Kyungyea

AU - Lee, Deok Kyou

AU - Kim, Byung Sung

AU - Jeon, Haseok

AU - Lee, Nae Eung

AU - Whang, Dongmok

AU - Lee, Hoo Jeong

AU - Kim, Youn Jea

AU - Ahn, Jong Hyun

PY - 2010/10/22

Y1 - 2010/10/22

N2 - Stretchable and transparent thin film transistors (TFTs) with intrisically brittle oxide semiconductors are built using a wavy structural configuration that can provide high flexibility and stretchability. After device fabrication procedures including high temperature annealing, the oxide semiconductor-based TFT arrays can be transferred directly to plastic or rubber substrates, without an additional device process, using transfer printing methods. This procedure can avoid some of the thermal degradation problems associated with plastic or rubber substrates by separating them from the annealing procedure needed to improve the device performance. These design and fabrication methods offer the possibility of developing a new format of stretchable electronics

AB - Stretchable and transparent thin film transistors (TFTs) with intrisically brittle oxide semiconductors are built using a wavy structural configuration that can provide high flexibility and stretchability. After device fabrication procedures including high temperature annealing, the oxide semiconductor-based TFT arrays can be transferred directly to plastic or rubber substrates, without an additional device process, using transfer printing methods. This procedure can avoid some of the thermal degradation problems associated with plastic or rubber substrates by separating them from the annealing procedure needed to improve the device performance. These design and fabrication methods offer the possibility of developing a new format of stretchable electronics

UR - http://www.scopus.com/inward/record.url?scp=78149443812&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78149443812&partnerID=8YFLogxK

U2 - 10.1002/adfm.201001107

DO - 10.1002/adfm.201001107

M3 - Article

AN - SCOPUS:78149443812

VL - 20

SP - 3577

EP - 3582

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

IS - 20

ER -

Park K, Lee DK, Kim BS, Jeon H, Lee NE, Whang D et al. Stretchable, transparent zinc oxide thin film transistors. Advanced Functional Materials. 2010 Oct 22;20(20):3577-3582. https://doi.org/10.1002/adfm.201001107