Strong enhancement of roomerature thermoelectric properties of Cu-doped Bi2Te2.7Se0.3

Gwansik Kim, Kyungmi Lee, Hyunjun Shin, Jeongmin Kim, Joonyeon Chang, Jong Wook Roh, Wooyoung Lee

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3 Citations (Scopus)


We investigate thermoelectric properties of Cu-doped Bi2Te2.7Se0.3 fabricated using a simple doping process and spark plasma sintering. Through precise control of Cu doping, it is found that Cu atoms preferentially occupied Bi sites and then intercalated into the van der Waals gap with an increasing Cu content. Electrical transport properties of Cu-doped samples were systemically controlled using this mechanism. At the same time, thermal conductivities of the Cu-doped samples were reduced by the enhancement of point defect phonon scattering due to the Cu atoms. Compared to that of pristine samples, the dimensionless thermoelectric figure of merit ("ZT") of 0.98 at 323 K for the Cu-doped sample was increased by more than 92% owing to these synergetic effects. Furthermore, the shift of maximum ZT to room temperature provides advantages for enlarging the applications of thermoelectric effects at room temperature.

Original languageEnglish
Article number043903
JournalApplied Physics Letters
Issue number4
Publication statusPublished - 2022 Jan 24

Bibliographical note

Funding Information:
This work was supported by the Yonsei-KIST Institutional Program (Project No. 2Z06430-20-P069); the Technology Innovation Program (No. “20013621,” Center for Super Critical Material Industrial Technology) funded by the Ministry of Trade, Industry, and Energy (MOTIE, Korea); and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (Nos. NRF-2018R1D1A1A02085389, NRF-2019R1A6A1A11055660, and NRF-2021R1A5A8033165).

Publisher Copyright:
© 2022 Author(s).

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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