Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer

Hoon Hahn Yoon, Sungchul Jung, Gahyun Choi, Junhyung Kim, Youngeun Jeon, Yong Soo Kim, Hu Young Jeong, Kwanpyo Kim, Soon Yong Kwon, Kibog Park

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report the systematic experimental studies demonstrating that a graphene layer inserted at metal/n-Si(001) interface is efficient to explore interface Fermi-level pinning effect. It is confirmed that an inserted graphene layer prevents atomic interdiffusion to form an atomically abrupt Schottky contact. The Schottky barriers of metal/graphene/n-Si(001) junctions show a very weak dependence on metal work-function, implying that the metal Fermi-level is almost completely pinned at charge neutrality level close to the valence band edge of Si. The atomically impermeable and electronically transparent properties of graphene can be used generally to form an intact Schottky contact for all semiconductors.

Original languageEnglish
Pages (from-to)44-49
Number of pages6
JournalNano letters
Volume17
Issue number1
DOIs
Publication statusPublished - 2017 Jan 11

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Fermi level
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insertion
electric contacts
graphene
Metals
metals
Valence bands
Semiconductor materials
valence

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Yoon, Hoon Hahn ; Jung, Sungchul ; Choi, Gahyun ; Kim, Junhyung ; Jeon, Youngeun ; Kim, Yong Soo ; Jeong, Hu Young ; Kim, Kwanpyo ; Kwon, Soon Yong ; Park, Kibog. / Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer. In: Nano letters. 2017 ; Vol. 17, No. 1. pp. 44-49.
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abstract = "We report the systematic experimental studies demonstrating that a graphene layer inserted at metal/n-Si(001) interface is efficient to explore interface Fermi-level pinning effect. It is confirmed that an inserted graphene layer prevents atomic interdiffusion to form an atomically abrupt Schottky contact. The Schottky barriers of metal/graphene/n-Si(001) junctions show a very weak dependence on metal work-function, implying that the metal Fermi-level is almost completely pinned at charge neutrality level close to the valence band edge of Si. The atomically impermeable and electronically transparent properties of graphene can be used generally to form an intact Schottky contact for all semiconductors.",
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Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer. / Yoon, Hoon Hahn; Jung, Sungchul; Choi, Gahyun; Kim, Junhyung; Jeon, Youngeun; Kim, Yong Soo; Jeong, Hu Young; Kim, Kwanpyo; Kwon, Soon Yong; Park, Kibog.

In: Nano letters, Vol. 17, No. 1, 11.01.2017, p. 44-49.

Research output: Contribution to journalArticle

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