Strongly (001)-textured MgO/Co40Fe40B20 spin-tunnel contact on n-Ge(001) and its spin accumulation: Structural modification with ultrathin Mg insertion by sputtering

Soogil Lee, Sanghoon Kim, Jangyup Son, Seung Heon Chris Baek, Seok Hee Lee, Jongill Hong

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2 Citations (Scopus)

Abstract

The sputter-deposited fcc-MgO (001)[100]/bcc-Co40Fe40B20 (001)[110] spin-tunnel contact (STC) was succebfully prepared on n-Ge(001). We found that the interfacial modification by ultrathin (6 A) Mg insertion at the interface between n-Ge and MgO plays an important role in spin injection into Ge. The significantly amplified spin accumulation was observed in this STC as a result of the structural modification. The three-terminal Hanle signal of this STC was 2.7 times larger than that of the STC without Mg insertion. Our study confirms that a sputtering technique is indeed practical and useful to modify interfacial structures for the efficient injection of spins into semiconductors.

Original languageEnglish
Article number43005
JournalApplied Physics Express
Volume9
Issue number4
DOIs
Publication statusPublished - 2016 Apr

Bibliographical note

Funding Information:
The authors thank Dr. Yun Chang Park (NNFC) for help of XHRTEM observations and Ube Material Industries Ltd. in Japan for their support in providing single-crystal like MgO targets. This research was supported in part by the Future Semiconductor Device Technology Development Program (10044723) funded by Ministry of Trade, Industry and Energy and Korea Semiconductor Research Consortium, by Creative Materials Discovery Program (2015M3D1A1070465) and Grant (2014R1A2A1A11050290) through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning of the Korea government, and by the Agency for Defense Development of the Republic of Korea.

Publisher Copyright:
© 2016 The Japan Society of Applied Physics.

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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