Strongly (001)-textured MgO/Co40Fe40B20 spin-tunnel contact on n-Ge(001) and its spin accumulation: Structural modification with ultrathin Mg insertion by sputtering

Soogil Lee, Sanghoon Kim, Jangyup Son, Seung Heon Chris Baek, Seok Hee Lee, Jongill Hong

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2 Citations (Scopus)


The sputter-deposited fcc-MgO (001)[100]/bcc-Co40Fe40B20 (001)[110] spin-tunnel contact (STC) was succebfully prepared on n-Ge(001). We found that the interfacial modification by ultrathin (6 A) Mg insertion at the interface between n-Ge and MgO plays an important role in spin injection into Ge. The significantly amplified spin accumulation was observed in this STC as a result of the structural modification. The three-terminal Hanle signal of this STC was 2.7 times larger than that of the STC without Mg insertion. Our study confirms that a sputtering technique is indeed practical and useful to modify interfacial structures for the efficient injection of spins into semiconductors.

Original languageEnglish
Article number43005
JournalApplied Physics Express
Issue number4
Publication statusPublished - 2016 Apr


All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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