Strongly (001)-textured MgO/Co40Fe40B20 spin-tunnel contact on n-Ge(001) and its spin accumulation: Structural modification with ultrathin Mg insertion by sputtering

Soogil Lee; Sanghoon Kim; Jangyup Son; Seung Heon Chris Baek; Seok Hee Lee; Jongill Hong

doi:10.7567/APEX.9.043005

Strongly (001)-textured MgO/Co40Fe₄₀B₂₀ spin-tunnel contact on n-Ge(001) and its spin accumulation: Structural modification with ultrathin Mg insertion by sputtering

Soogil Lee, Sanghoon Kim, Jangyup Son, Seung Heon Chris Baek, Seok Hee Lee, Jongill Hong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The sputter-deposited fcc-MgO (001)[100]/bcc-Co40Fe40B20 (001)[110] spin-tunnel contact (STC) was succebfully prepared on n-Ge(001). We found that the interfacial modification by ultrathin (6 A) Mg insertion at the interface between n-Ge and MgO plays an important role in spin injection into Ge. The significantly amplified spin accumulation was observed in this STC as a result of the structural modification. The three-terminal Hanle signal of this STC was 2.7 times larger than that of the STC without Mg insertion. Our study confirms that a sputtering technique is indeed practical and useful to modify interfacial structures for the efficient injection of spins into semiconductors.

Original language	English
Article number	43005
Journal	Applied Physics Express
Volume	9
Issue number	4
DOIs	https://doi.org/10.7567/APEX.9.043005
Publication status	Published - 2016 Apr

Bibliographical note

Funding Information:
The authors thank Dr. Yun Chang Park (NNFC) for help of XHRTEM observations and Ube Material Industries Ltd. in Japan for their support in providing single-crystal like MgO targets. This research was supported in part by the Future Semiconductor Device Technology Development Program (10044723) funded by Ministry of Trade, Industry and Energy and Korea Semiconductor Research Consortium, by Creative Materials Discovery Program (2015M3D1A1070465) and Grant (2014R1A2A1A11050290) through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning of the Korea government, and by the Agency for Defense Development of the Republic of Korea.

Publisher Copyright:
© 2016 The Japan Society of Applied Physics.

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/APEX.9.043005

Cite this

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title = "Strongly (001)-textured MgO/Co40Fe40B20 spin-tunnel contact on n-Ge(001) and its spin accumulation: Structural modification with ultrathin Mg insertion by sputtering",

abstract = "The sputter-deposited fcc-MgO (001)[100]/bcc-Co40Fe40B20 (001)[110] spin-tunnel contact (STC) was succebfully prepared on n-Ge(001). We found that the interfacial modification by ultrathin (6 A) Mg insertion at the interface between n-Ge and MgO plays an important role in spin injection into Ge. The significantly amplified spin accumulation was observed in this STC as a result of the structural modification. The three-terminal Hanle signal of this STC was 2.7 times larger than that of the STC without Mg insertion. Our study confirms that a sputtering technique is indeed practical and useful to modify interfacial structures for the efficient injection of spins into semiconductors.",

author = "Soogil Lee and Sanghoon Kim and Jangyup Son and Baek, {Seung Heon Chris} and Lee, {Seok Hee} and Jongill Hong",

note = "Funding Information: The authors thank Dr. Yun Chang Park (NNFC) for help of XHRTEM observations and Ube Material Industries Ltd. in Japan for their support in providing single-crystal like MgO targets. This research was supported in part by the Future Semiconductor Device Technology Development Program (10044723) funded by Ministry of Trade, Industry and Energy and Korea Semiconductor Research Consortium, by Creative Materials Discovery Program (2015M3D1A1070465) and Grant (2014R1A2A1A11050290) through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning of the Korea government, and by the Agency for Defense Development of the Republic of Korea. Publisher Copyright: {\textcopyright} 2016 The Japan Society of Applied Physics.",

year = "2016",

month = apr,

doi = "10.7567/APEX.9.043005",

language = "English",

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journal = "Applied Physics Express",

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T2 - Structural modification with ultrathin Mg insertion by sputtering

AU - Lee, Soogil

AU - Kim, Sanghoon

AU - Son, Jangyup

AU - Baek, Seung Heon Chris

AU - Lee, Seok Hee

AU - Hong, Jongill

N1 - Funding Information: The authors thank Dr. Yun Chang Park (NNFC) for help of XHRTEM observations and Ube Material Industries Ltd. in Japan for their support in providing single-crystal like MgO targets. This research was supported in part by the Future Semiconductor Device Technology Development Program (10044723) funded by Ministry of Trade, Industry and Energy and Korea Semiconductor Research Consortium, by Creative Materials Discovery Program (2015M3D1A1070465) and Grant (2014R1A2A1A11050290) through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning of the Korea government, and by the Agency for Defense Development of the Republic of Korea. Publisher Copyright: © 2016 The Japan Society of Applied Physics.

PY - 2016/4

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N2 - The sputter-deposited fcc-MgO (001)[100]/bcc-Co40Fe40B20 (001)[110] spin-tunnel contact (STC) was succebfully prepared on n-Ge(001). We found that the interfacial modification by ultrathin (6 A) Mg insertion at the interface between n-Ge and MgO plays an important role in spin injection into Ge. The significantly amplified spin accumulation was observed in this STC as a result of the structural modification. The three-terminal Hanle signal of this STC was 2.7 times larger than that of the STC without Mg insertion. Our study confirms that a sputtering technique is indeed practical and useful to modify interfacial structures for the efficient injection of spins into semiconductors.

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