Structire, properties, and process characteristics of low-k materials prepared by PECVD

Y. Shimogaki, Sangwoo Lim, E. G. Loh, Y. Nakano, K. Tada, H. Komiyama

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Low dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF 4, to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH 4/N 2O/CF 4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C 2F 4, and we found ionic species is the main precursor to form C:F films.

Original languageEnglish
Pages (from-to)255-266
Number of pages12
JournalMaterials Research Society Symposium - Proceedings
Volume565
Publication statusPublished - 1999 Dec 1
EventThe 1999 MRS Spring Meeting - Symposium O 'Low-Dielectric Constant Materials V' - San Francisco, CA, United States
Duration: 1999 Apr 51999 Apr 8

Fingerprint

Plasma enhanced chemical vapor deposition
Silicon oxides
silicon oxides
Oxide films
Fluorine
oxide films
Permittivity
permittivity
fluorine
ring structures
Oxides
gas flow
Flow of gases
Raman spectroscopy
flow velocity
reactors
Flow rate
Polarization
Kinetics
oxides

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Shimogaki, Y. ; Lim, Sangwoo ; Loh, E. G. ; Nakano, Y. ; Tada, K. ; Komiyama, H. / Structire, properties, and process characteristics of low-k materials prepared by PECVD. In: Materials Research Society Symposium - Proceedings. 1999 ; Vol. 565. pp. 255-266.
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abstract = "Low dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF 4, to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH 4/N 2O/CF 4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C 2F 4, and we found ionic species is the main precursor to form C:F films.",
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Structire, properties, and process characteristics of low-k materials prepared by PECVD. / Shimogaki, Y.; Lim, Sangwoo; Loh, E. G.; Nakano, Y.; Tada, K.; Komiyama, H.

In: Materials Research Society Symposium - Proceedings, Vol. 565, 01.12.1999, p. 255-266.

Research output: Contribution to journalConference article

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T1 - Structire, properties, and process characteristics of low-k materials prepared by PECVD

AU - Shimogaki, Y.

AU - Lim, Sangwoo

AU - Loh, E. G.

AU - Nakano, Y.

AU - Tada, K.

AU - Komiyama, H.

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AB - Low dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF 4, to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH 4/N 2O/CF 4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C 2F 4, and we found ionic species is the main precursor to form C:F films.

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