Structural and electrical characteristics of Y2O3 films grown on oxidized Si(100) surface

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

The physical and electrical properties of the films grown on clean and oxidized Si surfaces were studied. The properties showed that the oxidized Si surface treated with a wet chemical process is appropriate for the Y2O3 film growth. Electrical properties were determined for the purpose of applying the film as a MOS device.

Original languageEnglish
Pages (from-to)192-199
Number of pages8
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume19
Issue number1
DOIs
Publication statusPublished - 2001 Jan 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Structural and electrical characteristics of Y<sub>2</sub>O<sub>3</sub> films grown on oxidized Si(100) surface'. Together they form a unique fingerprint.

  • Cite this