Structural and electrical characteristics of Y2O3 films grown on oxidized Si(100) surface

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

The physical and electrical properties of the films grown on clean and oxidized Si surfaces were studied. The properties showed that the oxidized Si surface treated with a wet chemical process is appropriate for the Y2O3 film growth. Electrical properties were determined for the purpose of applying the film as a MOS device.

Original languageEnglish
Pages (from-to)192-199
Number of pages8
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume19
Issue number1
DOIs
Publication statusPublished - 2001 Jan 1

Fingerprint

Electric properties
MOS devices
Film growth
electrical properties
Physical properties
physical properties

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

@article{4515fb3dc7e7423bb61bdbdc4efdf236,
title = "Structural and electrical characteristics of Y2O3 films grown on oxidized Si(100) surface",
abstract = "The physical and electrical properties of the films grown on clean and oxidized Si surfaces were studied. The properties showed that the oxidized Si surface treated with a wet chemical process is appropriate for the Y2O3 film growth. Electrical properties were determined for the purpose of applying the film as a MOS device.",
author = "Cho, {M. H.}",
year = "2001",
month = "1",
day = "1",
doi = "10.1116/1.1331296",
language = "English",
volume = "19",
pages = "192--199",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "1",

}

TY - JOUR

T1 - Structural and electrical characteristics of Y2O3 films grown on oxidized Si(100) surface

AU - Cho, M. H.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - The physical and electrical properties of the films grown on clean and oxidized Si surfaces were studied. The properties showed that the oxidized Si surface treated with a wet chemical process is appropriate for the Y2O3 film growth. Electrical properties were determined for the purpose of applying the film as a MOS device.

AB - The physical and electrical properties of the films grown on clean and oxidized Si surfaces were studied. The properties showed that the oxidized Si surface treated with a wet chemical process is appropriate for the Y2O3 film growth. Electrical properties were determined for the purpose of applying the film as a MOS device.

UR - http://www.scopus.com/inward/record.url?scp=0035101132&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035101132&partnerID=8YFLogxK

U2 - 10.1116/1.1331296

DO - 10.1116/1.1331296

M3 - Article

VL - 19

SP - 192

EP - 199

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 1

ER -