Structural and electrical characteristics of Y2O3 films grown on oxidized Si(100) surface

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Abstract

The physical and electrical properties of the films grown on clean and oxidized Si surfaces were studied. The properties showed that the oxidized Si surface treated with a wet chemical process is appropriate for the Y2O3 film growth. Electrical properties were determined for the purpose of applying the film as a MOS device.

Original languageEnglish
Pages (from-to)192-199
Number of pages8
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume19
Issue number1
DOIs
Publication statusPublished - 2001 Jan 1

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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