The physical and electrical properties of the films grown on clean and oxidized Si surfaces were studied. The properties showed that the oxidized Si surface treated with a wet chemical process is appropriate for the Y2O3 film growth. Electrical properties were determined for the purpose of applying the film as a MOS device.
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2001 Jan 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films