Structural and electrical properties of a La2O3 thin film as a gate dielectric

Jin Hyung Jun, Chae Hyun Wang, Dong Jin Won, Doo Jin Choi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

La2O3 thin films with thicknesses of about 12 nm were directly deposited on Si substrates by using metalorganic chemical-vapor deposition (MOCVD) with La(tmhd)3 as a source precursor. The structural and the electrical properties of the as-deposited and annealed films were investigated as functions of annealing temperature and the results were compared with those for La2O3 films with thicknesses of 42 nm. The 12-nm-thick film did not crystallize when annealed at temperatures up to 900 °C while the 42-nm-thick film did crystallize. The dielectric constant of the as-deposited 12-nm-thick film was 21, and the capacitance equivalent-oxide thickness was 2.2 nm. The leakage current density of the film was about 10-2 A/cm2 at +1 V. As the annealing temperature was increase, the dielectric constant and the leakage current density of the film decreased. Although the dielectric constants of the films with thicknesses of 12 nm were small and the leakage current densities were high compared with the films with thicknesses of 42 nm, the dielectric constant was high enough for applications as a future gate dielectric.

Original languageEnglish
Pages (from-to)998-1002
Number of pages5
JournalJournal of the Korean Physical Society
Volume41
Issue number6
Publication statusPublished - 2002 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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