Structural and electrical properties of direct-patternable Bi 4-XNdXTi3O12 ferroelectric thin films

Hong Sub Lee, Yun Taek Hwang, Hyung Ho Park

Research output: Contribution to journalArticle

Abstract

Variations in the structural and electrical properties of Bi 4Ti3O12 ferroelectric thin films in the Aurivillius family were investigated by substituting Nd3+ for Bi as Bi4-xNdxTi3O12 (x = 0, 0.35, 0.65, and 0.85) using a direct-patternable photochemical metal-organic deposition method. Photoemission spectroscopic and X-ray absorption spectroscopic analyses revealed that as the substitution of Nd3+ for Bi increased until x = 0.65, the orthorhombicity decreased followed by an increase in covalent mixing and centro-symmetry of the Ti-O octahedrons. However, an increase in polarization of the Ti-O octahedron due to Jahn-Teller distortion was observed due to the generation of oxygen vacancies at x = 0.85.

Original languageEnglish
Pages (from-to)255-262
Number of pages8
JournalFerroelectrics
Volume400
Issue number1
DOIs
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Structural and electrical properties of direct-patternable Bi <sub>4-X</sub>NdXTi<sub>3</sub>O<sub>12</sub> ferroelectric thin films'. Together they form a unique fingerprint.

  • Cite this