Structural and electrical properties of La0.7Sr 0.3MnO3 film on SiO2/Si substrate by RF magnetron sputtering at low temperature

Sun Gyu Choi, A. Sivasankar Reddy, Tae Jung Ha, Byoung Gon Yu, Hyung-Ho Park

Research output: Contribution to journalArticle

Abstract

The La0.7Sr0.3MnO3 was deposited on SiO2/Si substrate by RF magnetron sputtering. The oxygen gas flow rate was changed from 0 to 80 sccm and the substrate temperature was 350°C. The oxygen gas flow rate was changed to control the growth orientation and crystalline state of the film. Relatively high TCR (temperature coefficient of resistance) value (-2.33%/K) was obtained when comparing with the reported values of the films prepared by using high substrate anneal temperature. The decrease in the sheet resistance and TCR value were observed when grain size of the film increased with the increase of oxygen gas flow rate.

Original languageEnglish
Pages (from-to)645-649
Number of pages5
JournalJournal of the Korean Ceramic Society
Volume44
Issue number11
DOIs
Publication statusPublished - 2007 Nov 30

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Magnetron sputtering
Structural properties
Electric properties
Flow of gases
Flow rate
Substrates
Oxygen
Temperature
Sheet resistance
Crystal orientation
Crystalline materials

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

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title = "Structural and electrical properties of La0.7Sr 0.3MnO3 film on SiO2/Si substrate by RF magnetron sputtering at low temperature",
abstract = "The La0.7Sr0.3MnO3 was deposited on SiO2/Si substrate by RF magnetron sputtering. The oxygen gas flow rate was changed from 0 to 80 sccm and the substrate temperature was 350°C. The oxygen gas flow rate was changed to control the growth orientation and crystalline state of the film. Relatively high TCR (temperature coefficient of resistance) value (-2.33{\%}/K) was obtained when comparing with the reported values of the films prepared by using high substrate anneal temperature. The decrease in the sheet resistance and TCR value were observed when grain size of the film increased with the increase of oxygen gas flow rate.",
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Structural and electrical properties of La0.7Sr 0.3MnO3 film on SiO2/Si substrate by RF magnetron sputtering at low temperature. / Choi, Sun Gyu; Reddy, A. Sivasankar; Ha, Tae Jung; Yu, Byoung Gon; Park, Hyung-Ho.

In: Journal of the Korean Ceramic Society, Vol. 44, No. 11, 30.11.2007, p. 645-649.

Research output: Contribution to journalArticle

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T1 - Structural and electrical properties of La0.7Sr 0.3MnO3 film on SiO2/Si substrate by RF magnetron sputtering at low temperature

AU - Choi, Sun Gyu

AU - Reddy, A. Sivasankar

AU - Ha, Tae Jung

AU - Yu, Byoung Gon

AU - Park, Hyung-Ho

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Y1 - 2007/11/30

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AB - The La0.7Sr0.3MnO3 was deposited on SiO2/Si substrate by RF magnetron sputtering. The oxygen gas flow rate was changed from 0 to 80 sccm and the substrate temperature was 350°C. The oxygen gas flow rate was changed to control the growth orientation and crystalline state of the film. Relatively high TCR (temperature coefficient of resistance) value (-2.33%/K) was obtained when comparing with the reported values of the films prepared by using high substrate anneal temperature. The decrease in the sheet resistance and TCR value were observed when grain size of the film increased with the increase of oxygen gas flow rate.

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