Structural and electrical properties of solution-processed gallium-doped indium oxide thin-film transistors

Jee Ho Park, Won Jin Choi, Soo Sang Chae, Jin Young Oh, Se Jong Lee, Kie Moon Song, Hong Koo Baik

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We fabricated solution-processed gallium-doped indium oxide (GIO) thin-film transistors (TFTs). The electrical property, crystallinity, and transmittance were investigated as a function of gallium content. Varying the gallium/indium ratio is found to have a significant effect on structural and electrical properties of thin films. The shrinkage of the lattice of a GIO film originates from substitution of Ga on In sites in the In2O3 lattice, which was verified by X-ray diffraction (XRD) analysis. By increasing the gallium ratio of the channel material, the GIO film shows an amorphous phase. The optimized GIO film (Ga/ln = 0.35) has an electron mobility of 3.59 cm 2 V-1 s-1, a threshold voltage of 0.1 V, an on/off current ratio of 8.2 × 107, and a subthreshold slope of 0.9V/decade, and is highly transparent (∼92%) in the visible region.

Original languageEnglish
Article number080202
JournalJapanese journal of applied physics
Volume50
Issue number8 PART 1
DOIs
Publication statusPublished - 2011 Aug

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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