Structural and electrical properties of solution-processed gallium-doped indium oxide thin-film transistors

Jee Ho Park, Won Jin Choi, Soo Sang Chae, Jin Young Oh, Se Jong Lee, Kie Moon Song, Hong Koo Baik

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We fabricated solution-processed gallium-doped indium oxide (GIO) thin-film transistors (TFTs). The electrical property, crystallinity, and transmittance were investigated as a function of gallium content. Varying the gallium/indium ratio is found to have a significant effect on structural and electrical properties of thin films. The shrinkage of the lattice of a GIO film originates from substitution of Ga on In sites in the In2O3 lattice, which was verified by X-ray diffraction (XRD) analysis. By increasing the gallium ratio of the channel material, the GIO film shows an amorphous phase. The optimized GIO film (Ga/ln = 0.35) has an electron mobility of 3.59 cm 2 V-1 s-1, a threshold voltage of 0.1 V, an on/off current ratio of 8.2 × 107, and a subthreshold slope of 0.9V/decade, and is highly transparent (∼92%) in the visible region.

Original languageEnglish
Article number080202
JournalJapanese Journal of Applied Physics
Volume50
Issue number8 PART 1
DOIs
Publication statusPublished - 2011 Aug 1

Fingerprint

Gallium
Thin film transistors
indium oxides
Indium
Oxide films
gallium
Structural properties
Electric properties
transistors
electrical properties
thin films
oxide films
Electron mobility
Threshold voltage
electron mobility
shrinkage
threshold voltage
X ray diffraction analysis
indium
crystallinity

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Park, Jee Ho ; Choi, Won Jin ; Chae, Soo Sang ; Oh, Jin Young ; Lee, Se Jong ; Song, Kie Moon ; Baik, Hong Koo. / Structural and electrical properties of solution-processed gallium-doped indium oxide thin-film transistors. In: Japanese Journal of Applied Physics. 2011 ; Vol. 50, No. 8 PART 1.
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abstract = "We fabricated solution-processed gallium-doped indium oxide (GIO) thin-film transistors (TFTs). The electrical property, crystallinity, and transmittance were investigated as a function of gallium content. Varying the gallium/indium ratio is found to have a significant effect on structural and electrical properties of thin films. The shrinkage of the lattice of a GIO film originates from substitution of Ga on In sites in the In2O3 lattice, which was verified by X-ray diffraction (XRD) analysis. By increasing the gallium ratio of the channel material, the GIO film shows an amorphous phase. The optimized GIO film (Ga/ln = 0.35) has an electron mobility of 3.59 cm 2 V-1 s-1, a threshold voltage of 0.1 V, an on/off current ratio of 8.2 × 107, and a subthreshold slope of 0.9V/decade, and is highly transparent (∼92{\%}) in the visible region.",
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Structural and electrical properties of solution-processed gallium-doped indium oxide thin-film transistors. / Park, Jee Ho; Choi, Won Jin; Chae, Soo Sang; Oh, Jin Young; Lee, Se Jong; Song, Kie Moon; Baik, Hong Koo.

In: Japanese Journal of Applied Physics, Vol. 50, No. 8 PART 1, 080202, 01.08.2011.

Research output: Contribution to journalArticle

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AU - Park, Jee Ho

AU - Choi, Won Jin

AU - Chae, Soo Sang

AU - Oh, Jin Young

AU - Lee, Se Jong

AU - Song, Kie Moon

AU - Baik, Hong Koo

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AB - We fabricated solution-processed gallium-doped indium oxide (GIO) thin-film transistors (TFTs). The electrical property, crystallinity, and transmittance were investigated as a function of gallium content. Varying the gallium/indium ratio is found to have a significant effect on structural and electrical properties of thin films. The shrinkage of the lattice of a GIO film originates from substitution of Ga on In sites in the In2O3 lattice, which was verified by X-ray diffraction (XRD) analysis. By increasing the gallium ratio of the channel material, the GIO film shows an amorphous phase. The optimized GIO film (Ga/ln = 0.35) has an electron mobility of 3.59 cm 2 V-1 s-1, a threshold voltage of 0.1 V, an on/off current ratio of 8.2 × 107, and a subthreshold slope of 0.9V/decade, and is highly transparent (∼92%) in the visible region.

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