Structural and electrical properties of ZnO thin films deposited by atomic layer deposition at low temperatures

Sunyeol Jeon, Seokhwan Bang, Seungjun Lee, Semyung Kwon, Wooho Jeong, Hyeongtag Jeon, Ho Jung Chang, Hyung Ho Park

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

In this study, ZnO thin films were deposited by atomic layer deposition (ALD) at various process temperatures. The purpose of this paper was to investigate the controllability of the preferred orientations of ZnO thin films by varying the process temperature and to determine the effect of the preferred orientations on the electrical properties of the films. The process temperature was varied from 70 to 250°C at several increments while the other ALD process parameters were fixed. The deposition rates and uniformities, crystal structures, and electrical properties of these films were evaluated at the various process temperatures. At process temperatures of 70 and 90°C, ZnO thin films showed strong (002) preferred orientations with cylindrical, fine, columnar crystal structures, almost a 1:1 stoichiometric chemical ratio of Zn to O, and n-type carrier concentrations in the range of 1016 cm-3 with resistivities of 0.1-1 cm. ZnO thin films deposited at temperatures higher than 110°C had wedge-shaped crystal structures, high oxygen deficiencies, and higher n-type carrier concentrations up to 1020 cm-3 than the films deposited at lower temperatures.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume155
Issue number10
DOIs
Publication statusPublished - 2008 Sep 22

Fingerprint

Atomic layer deposition
Structural properties
Electric properties
Thin films
Crystal structure
Temperature
Carrier concentration
Deposition rates
Controllability
Crystal orientation
Oxygen

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Jeon, Sunyeol ; Bang, Seokhwan ; Lee, Seungjun ; Kwon, Semyung ; Jeong, Wooho ; Jeon, Hyeongtag ; Chang, Ho Jung ; Park, Hyung Ho. / Structural and electrical properties of ZnO thin films deposited by atomic layer deposition at low temperatures. In: Journal of the Electrochemical Society. 2008 ; Vol. 155, No. 10.
@article{2ffc265306794e3280cba50b0324a661,
title = "Structural and electrical properties of ZnO thin films deposited by atomic layer deposition at low temperatures",
abstract = "In this study, ZnO thin films were deposited by atomic layer deposition (ALD) at various process temperatures. The purpose of this paper was to investigate the controllability of the preferred orientations of ZnO thin films by varying the process temperature and to determine the effect of the preferred orientations on the electrical properties of the films. The process temperature was varied from 70 to 250°C at several increments while the other ALD process parameters were fixed. The deposition rates and uniformities, crystal structures, and electrical properties of these films were evaluated at the various process temperatures. At process temperatures of 70 and 90°C, ZnO thin films showed strong (002) preferred orientations with cylindrical, fine, columnar crystal structures, almost a 1:1 stoichiometric chemical ratio of Zn to O, and n-type carrier concentrations in the range of 1016 cm-3 with resistivities of 0.1-1 cm. ZnO thin films deposited at temperatures higher than 110°C had wedge-shaped crystal structures, high oxygen deficiencies, and higher n-type carrier concentrations up to 1020 cm-3 than the films deposited at lower temperatures.",
author = "Sunyeol Jeon and Seokhwan Bang and Seungjun Lee and Semyung Kwon and Wooho Jeong and Hyeongtag Jeon and Chang, {Ho Jung} and Park, {Hyung Ho}",
year = "2008",
month = "9",
day = "22",
doi = "10.1149/1.2957915",
language = "English",
volume = "155",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "10",

}

Structural and electrical properties of ZnO thin films deposited by atomic layer deposition at low temperatures. / Jeon, Sunyeol; Bang, Seokhwan; Lee, Seungjun; Kwon, Semyung; Jeong, Wooho; Jeon, Hyeongtag; Chang, Ho Jung; Park, Hyung Ho.

In: Journal of the Electrochemical Society, Vol. 155, No. 10, 22.09.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Structural and electrical properties of ZnO thin films deposited by atomic layer deposition at low temperatures

AU - Jeon, Sunyeol

AU - Bang, Seokhwan

AU - Lee, Seungjun

AU - Kwon, Semyung

AU - Jeong, Wooho

AU - Jeon, Hyeongtag

AU - Chang, Ho Jung

AU - Park, Hyung Ho

PY - 2008/9/22

Y1 - 2008/9/22

N2 - In this study, ZnO thin films were deposited by atomic layer deposition (ALD) at various process temperatures. The purpose of this paper was to investigate the controllability of the preferred orientations of ZnO thin films by varying the process temperature and to determine the effect of the preferred orientations on the electrical properties of the films. The process temperature was varied from 70 to 250°C at several increments while the other ALD process parameters were fixed. The deposition rates and uniformities, crystal structures, and electrical properties of these films were evaluated at the various process temperatures. At process temperatures of 70 and 90°C, ZnO thin films showed strong (002) preferred orientations with cylindrical, fine, columnar crystal structures, almost a 1:1 stoichiometric chemical ratio of Zn to O, and n-type carrier concentrations in the range of 1016 cm-3 with resistivities of 0.1-1 cm. ZnO thin films deposited at temperatures higher than 110°C had wedge-shaped crystal structures, high oxygen deficiencies, and higher n-type carrier concentrations up to 1020 cm-3 than the films deposited at lower temperatures.

AB - In this study, ZnO thin films were deposited by atomic layer deposition (ALD) at various process temperatures. The purpose of this paper was to investigate the controllability of the preferred orientations of ZnO thin films by varying the process temperature and to determine the effect of the preferred orientations on the electrical properties of the films. The process temperature was varied from 70 to 250°C at several increments while the other ALD process parameters were fixed. The deposition rates and uniformities, crystal structures, and electrical properties of these films were evaluated at the various process temperatures. At process temperatures of 70 and 90°C, ZnO thin films showed strong (002) preferred orientations with cylindrical, fine, columnar crystal structures, almost a 1:1 stoichiometric chemical ratio of Zn to O, and n-type carrier concentrations in the range of 1016 cm-3 with resistivities of 0.1-1 cm. ZnO thin films deposited at temperatures higher than 110°C had wedge-shaped crystal structures, high oxygen deficiencies, and higher n-type carrier concentrations up to 1020 cm-3 than the films deposited at lower temperatures.

UR - http://www.scopus.com/inward/record.url?scp=51849104724&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51849104724&partnerID=8YFLogxK

U2 - 10.1149/1.2957915

DO - 10.1149/1.2957915

M3 - Article

AN - SCOPUS:51849104724

VL - 155

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 10

ER -