Structural and optical features of nanoporous silicon prepared by electrochemical anodic etching

D. A. Kim, Seongil Im, C. M. Whang, W. S. Cho, Y. C. Yoo, N. H. Cho, J. G. Kim, Y. J. Kwon

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Abstract

Nanoporous silicon (NPS) samples were prepared by electrochemical anodic etching of p-type (0 0 1) silicon wafers in HF solution, and some of them were aged in air. The nanostructural, optical and chemical features of the NPS were investigated in terms of etching and aging conditions. The surface of the porous Si exhibits an etched layer with a thickness of 30-40nm; this layer appears to consist of aggregates of 5-10nm size nano-crystallites. The NPS exhibited broad photoluminescence (PL) spectra with its peak in the red light region (∼740nm). After aging the porous samples for 4 weeks in air, we observed the PL intensity became approximately a fifth of that of the as-prepared one, along with a blue shift. It is very likely that the blue shift of the PL peak was caused by the shrinkage of the Si nano-crystallites due to the oxidation in the surface of the nano-crystallites.

Original languageEnglish
Pages (from-to)125-130
Number of pages6
JournalApplied Surface Science
Volume230
Issue number1-4
DOIs
Publication statusPublished - 2004 May 31

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All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Kim, D. A., Im, S., Whang, C. M., Cho, W. S., Yoo, Y. C., Cho, N. H., Kim, J. G., & Kwon, Y. J. (2004). Structural and optical features of nanoporous silicon prepared by electrochemical anodic etching. Applied Surface Science, 230(1-4), 125-130. https://doi.org/10.1016/j.apsusc.2004.01.074