Structural and optical properties of amorphous hydrogenated carbon nitride films prepared by plasma-enhanced chemical vapor deposition

Joo Han Kim, Hong Koo Baik

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Thin films of amorphous hydrogenated carbon nitride (a-CNx : H) were deposited from CH4 and N2 gases by plasma-enhanced chemical vapor deposition using a helical resonator discharge. The effects of substrate temperature on the structural and optical properties of the films have been systematically investigated by Raman spectroscopy and transmission ultraviolet-visible spectroscopy. The optical band gap of the a-CNx : H films was found to decrease from 1.72 to 0.95 eV as the substrate temperature is increased to 250°C. Through the relationship between optical band gap and Raman studies, it could be concluded that a progressive graphitization of the films occurs with increasing the substrate temperature.

Original languageEnglish
Pages (from-to)653-656
Number of pages4
JournalSolid State Communications
Volume104
Issue number11
DOIs
Publication statusPublished - 1997 Jan 1

Fingerprint

carbon nitrides
Carbon nitride
Plasma enhanced chemical vapor deposition
Structural properties
Optical properties
Optical band gaps
vapor deposition
optical properties
Substrates
Graphitization
graphitization
Ultraviolet visible spectroscopy
Temperature
temperature
Raman spectroscopy
Resonators
resonators
Thin films
thin films
Gases

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

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AB - Thin films of amorphous hydrogenated carbon nitride (a-CNx : H) were deposited from CH4 and N2 gases by plasma-enhanced chemical vapor deposition using a helical resonator discharge. The effects of substrate temperature on the structural and optical properties of the films have been systematically investigated by Raman spectroscopy and transmission ultraviolet-visible spectroscopy. The optical band gap of the a-CNx : H films was found to decrease from 1.72 to 0.95 eV as the substrate temperature is increased to 250°C. Through the relationship between optical band gap and Raman studies, it could be concluded that a progressive graphitization of the films occurs with increasing the substrate temperature.

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