The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm2), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.
Bibliographical noteFunding Information:
This work was mainly supported by the Ministry of Education, Science and Technology through the Global Research Laboratory Program and by collaboration within the Center for Photonics and Nanostructures, KIST-CNRS International Associated Labs. The authors in KIST acknowledge the partial support from the KIST institutional program.
© 2015, Lee et al.; licensee Springer.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics