Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

Eun Hye Lee; Jin Dong Song; Il Ki Han; Soo Kyung Chang; Fabian Langer; Sven Höfling; Alfred Forchel; Martin Kamp; Jong Su Kim

doi:10.1186/s11671-015-0826-2

Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

Eun Hye Lee, Jin Dong Song, Il Ki Han, Soo Kyung Chang, Fabian Langer, Sven Höfling, Alfred Forchel, Martin Kamp, Jong Su Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm²), was directly observed on the surface of a 45-nm-thick Al_0.3Ga_0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.

Original language	English
Article number	114
Journal	Nanoscale Research Letters
Volume	10
Issue number	1
DOIs	https://doi.org/10.1186/s11671-015-0826-2
Publication status	Published - 2015

Bibliographical note

Funding Information:
This work was mainly supported by the Ministry of Education, Science and Technology through the Global Research Laboratory Program and by collaboration within the Center for Photonics and Nanostructures, KIST-CNRS International Associated Labs. The authors in KIST acknowledge the partial support from the KIST institutional program.

Publisher Copyright:
© 2015, Lee et al.; licensee Springer.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

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10.1186/s11671-015-0826-2

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Lee, E. H., Song, J. D., Han, I. K., Chang, S. K., Langer, F., Höfling, S., Forchel, A., Kamp, M., & Kim, J. S. (2015). Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling. Nanoscale Research Letters, 10(1), [114]. https://doi.org/10.1186/s11671-015-0826-2

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title = "Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling",

abstract = "The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm2), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.",

author = "Lee, {Eun Hye} and Song, {Jin Dong} and Han, {Il Ki} and Chang, {Soo Kyung} and Fabian Langer and Sven H{\"o}fling and Alfred Forchel and Martin Kamp and Kim, {Jong Su}",

note = "Funding Information: This work was mainly supported by the Ministry of Education, Science and Technology through the Global Research Laboratory Program and by collaboration within the Center for Photonics and Nanostructures, KIST-CNRS International Associated Labs. The authors in KIST acknowledge the partial support from the KIST institutional program. Publisher Copyright: {\textcopyright} 2015, Lee et al.; licensee Springer.",

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doi = "10.1186/s11671-015-0826-2",

language = "English",

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Lee, EH, Song, JD, Han, IK, Chang, SK, Langer, F, Höfling, S, Forchel, A, Kamp, M & Kim, JS 2015, 'Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling', Nanoscale Research Letters, vol. 10, no. 1, 114. https://doi.org/10.1186/s11671-015-0826-2

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T1 - Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

AU - Lee, Eun Hye

AU - Song, Jin Dong

AU - Han, Il Ki

AU - Chang, Soo Kyung

AU - Langer, Fabian

AU - Höfling, Sven

AU - Forchel, Alfred

AU - Kamp, Martin

AU - Kim, Jong Su

N1 - Funding Information: This work was mainly supported by the Ministry of Education, Science and Technology through the Global Research Laboratory Program and by collaboration within the Center for Photonics and Nanostructures, KIST-CNRS International Associated Labs. The authors in KIST acknowledge the partial support from the KIST institutional program. Publisher Copyright: © 2015, Lee et al.; licensee Springer.

PY - 2015

Y1 - 2015

N2 - The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm2), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.

AB - The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm2), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.

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Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

Abstract

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