Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

Eun Hye Lee, Jin Dong Song, Il Ki Han, Soo Kyung Chang, Fabian Langer, Sven Höfling, Alfred Forchel, Martin Kamp, Jong Su Kim

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The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm2), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.

Original languageEnglish
JournalNanoscale Research Letters
Issue number1
Publication statusPublished - 2015 Jan 1


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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