Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

Eun Hye Lee, Jin Dong Song, Il Ki Han, Soo Kyung Chang, Fabian Langer, Sven Höfling, Alfred Forchel, Martin Kamp, Jong Su Kim

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm2), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.

Original languageEnglish
Article number114
JournalNanoscale Research Letters
Volume10
Issue number1
DOIs
Publication statusPublished - 2015

Bibliographical note

Funding Information:
This work was mainly supported by the Ministry of Education, Science and Technology through the Global Research Laboratory Program and by collaboration within the Center for Photonics and Nanostructures, KIST-CNRS International Associated Labs. The authors in KIST acknowledge the partial support from the KIST institutional program.

Publisher Copyright:
© 2015, Lee et al.; licensee Springer.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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